JPS566432A - Treatment of semiconductor substrate - Google Patents

Treatment of semiconductor substrate

Info

Publication number
JPS566432A
JPS566432A JP8095679A JP8095679A JPS566432A JP S566432 A JPS566432 A JP S566432A JP 8095679 A JP8095679 A JP 8095679A JP 8095679 A JP8095679 A JP 8095679A JP S566432 A JPS566432 A JP S566432A
Authority
JP
Japan
Prior art keywords
wafer
element forming
region
defects
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8095679A
Other languages
English (en)
Inventor
Takanori Hayafuji
Seiji Kawato
Yoshio Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8095679A priority Critical patent/JPS566432A/ja
Publication of JPS566432A publication Critical patent/JPS566432A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Dicing (AREA)
JP8095679A 1979-06-27 1979-06-27 Treatment of semiconductor substrate Pending JPS566432A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8095679A JPS566432A (en) 1979-06-27 1979-06-27 Treatment of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8095679A JPS566432A (en) 1979-06-27 1979-06-27 Treatment of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS566432A true JPS566432A (en) 1981-01-23

Family

ID=13732951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8095679A Pending JPS566432A (en) 1979-06-27 1979-06-27 Treatment of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS566432A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844726A (ja) * 1981-09-11 1983-03-15 Nippon Telegr & Teleph Corp <Ntt> ゲッタリング方法
US4951110A (en) * 1987-11-03 1990-08-21 Siemens Aktiengesellschaft Power semiconductor structural element with four layers
JP2015119111A (ja) * 2013-12-19 2015-06-25 国立大学法人東京工業大学 半導体装置及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844726A (ja) * 1981-09-11 1983-03-15 Nippon Telegr & Teleph Corp <Ntt> ゲッタリング方法
US4951110A (en) * 1987-11-03 1990-08-21 Siemens Aktiengesellschaft Power semiconductor structural element with four layers
JP2015119111A (ja) * 2013-12-19 2015-06-25 国立大学法人東京工業大学 半導体装置及びその製造方法

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