JPS566433A - Growth of molybdenum film - Google Patents

Growth of molybdenum film

Info

Publication number
JPS566433A
JPS566433A JP8092979A JP8092979A JPS566433A JP S566433 A JPS566433 A JP S566433A JP 8092979 A JP8092979 A JP 8092979A JP 8092979 A JP8092979 A JP 8092979A JP S566433 A JPS566433 A JP S566433A
Authority
JP
Japan
Prior art keywords
molybdenum
mos
film
type transistor
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8092979A
Other languages
Japanese (ja)
Other versions
JPS6318332B2 (en
Inventor
Atsumasa Doi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP8092979A priority Critical patent/JPS566433A/en
Publication of JPS566433A publication Critical patent/JPS566433A/en
Publication of JPS6318332B2 publication Critical patent/JPS6318332B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a resistor made of a molybdenum layer having the desired high specific resistance by mixing several % of nitrogen gas when pentachlorinated molybdenum is reduced with hydrogen gas to grow the molybdenum film in vapor phase. CONSTITUTION:When the electrode and the resistor of the MOS-type transistor is produced from molybdenum, a field oxide film 2 is provided on the silicone substrate 1 while a gate oxide film 3 on the semiconductor region for forming the MOS-type transistor. Then, the resister 4 made up of the molybdenum film is formed on the field oxide film 2 intended to form the high resistance element thereon. In this case, several % of nitrogen gas is mixed in the reduction of the pentachlorinated molybdenum with hydrogen to perform a vapor phase growth and it is etched leaving necessary portions. Thereafter, a normal molybdenum film low in the resistance is provided on the portions intended for the electrode and the product undergoes the well-known process to obtain the MOS-type transistor.
JP8092979A 1979-06-26 1979-06-26 Growth of molybdenum film Granted JPS566433A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8092979A JPS566433A (en) 1979-06-26 1979-06-26 Growth of molybdenum film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8092979A JPS566433A (en) 1979-06-26 1979-06-26 Growth of molybdenum film

Publications (2)

Publication Number Publication Date
JPS566433A true JPS566433A (en) 1981-01-23
JPS6318332B2 JPS6318332B2 (en) 1988-04-18

Family

ID=13732120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8092979A Granted JPS566433A (en) 1979-06-26 1979-06-26 Growth of molybdenum film

Country Status (1)

Country Link
JP (1) JPS566433A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517156A (en) * 1974-06-10 1976-01-21 Gen Foods Corp

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517156A (en) * 1974-06-10 1976-01-21 Gen Foods Corp

Also Published As

Publication number Publication date
JPS6318332B2 (en) 1988-04-18

Similar Documents

Publication Publication Date Title
DE1298189B (en) Method for producing isolated areas in an integrated semiconductor circuit
JPS5582458A (en) Preparation of semiconductor device
US4194927A (en) Selective thermal oxidation of As-containing compound semiconductor regions
JPS56115557A (en) Manufacture of semiconductor device
JPS5529108A (en) Semiconductor resistance element
JPS6352471B2 (en)
JPS572519A (en) Manufacture of semiconductor device
JPS57196542A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5563839A (en) Manufacture of semiconductor integrated circuit
JPS52128057A (en) Manufacture of arsenide gallium epitaxial thin layer
JPS649615A (en) Manufacture of semiconductor device
JPS6476756A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5623737A (en) Manufacture of buried type semiconductor element substrate
JPS57115822A (en) Manufacture of semiconductor device
JPS558036A (en) Electrode formation
JPS5654058A (en) Integrated circuit
JPS57133659A (en) Manufacture of polycrystalline semiconductor element
JPS5593269A (en) Manufacture of semiconductor device
JPS5687353A (en) Semiconductor integrated circuit device
JPS5459085A (en) Manufacture of junction type field effect transistor
JPS55145346A (en) Fabricating method of semiconductor element
JPS5740939A (en) P-n junction formation
JPS5563838A (en) Preparation of semiconductor integrated circuit
JPS6474753A (en) Manufacture of semiconductor device
JPS57199236A (en) Manufacture of oxide film isolation semiconductor device