JPS5687353A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5687353A
JPS5687353A JP16427479A JP16427479A JPS5687353A JP S5687353 A JPS5687353 A JP S5687353A JP 16427479 A JP16427479 A JP 16427479A JP 16427479 A JP16427479 A JP 16427479A JP S5687353 A JPS5687353 A JP S5687353A
Authority
JP
Japan
Prior art keywords
film
opening
resistance element
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16427479A
Other languages
Japanese (ja)
Inventor
Osamu Kudo
Yukinobu Murao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP16427479A priority Critical patent/JPS5687353A/en
Publication of JPS5687353A publication Critical patent/JPS5687353A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain the semiconductor device having a high integration when a resistance element is to be provided on the semiconductor substrate by a method wherein a plasma vapor phase growth layer of S nitride film, amorphous Si film, etc., is used as a resistor forming material. CONSTITUTION:For example, a field oxide film 102, a gate oxide film 104, source, drain 103 are formed on the p type Si substrate 101. An opening is provided in the gate electrode 105 being connected with the source, drain 103 through buried opening parts. The resistance element 106 is provided in the opening using the plasma vapor phase growth layer of Si nitride film, amorphous Si film, etc., and is connected with an Al wiring 107. Accordingly the occupying area of the resistance element becomes the same grade with the area of the opening part, and the high integration of the semiconductor device can be attempted.
JP16427479A 1979-12-18 1979-12-18 Semiconductor integrated circuit device Pending JPS5687353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16427479A JPS5687353A (en) 1979-12-18 1979-12-18 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16427479A JPS5687353A (en) 1979-12-18 1979-12-18 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5687353A true JPS5687353A (en) 1981-07-15

Family

ID=15789964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16427479A Pending JPS5687353A (en) 1979-12-18 1979-12-18 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5687353A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951118A (en) * 1985-10-07 1990-08-21 Nec Corporation Semiconductor device having resistor structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4957780A (en) * 1972-10-02 1974-06-05
JPS52115785A (en) * 1976-01-22 1977-09-28 Western Electric Co Process for coating substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4957780A (en) * 1972-10-02 1974-06-05
JPS52115785A (en) * 1976-01-22 1977-09-28 Western Electric Co Process for coating substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951118A (en) * 1985-10-07 1990-08-21 Nec Corporation Semiconductor device having resistor structure

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