JPS566469A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS566469A
JPS566469A JP8072879A JP8072879A JPS566469A JP S566469 A JPS566469 A JP S566469A JP 8072879 A JP8072879 A JP 8072879A JP 8072879 A JP8072879 A JP 8072879A JP S566469 A JPS566469 A JP S566469A
Authority
JP
Japan
Prior art keywords
layer
low density
type
layers
density layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8072879A
Other languages
Japanese (ja)
Inventor
Susumu Nishiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8072879A priority Critical patent/JPS566469A/en
Publication of JPS566469A publication Critical patent/JPS566469A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent deterioration of the withstand voltage of a semiconductor device by forming insulating layers on both main surfaces of a first conducting type semiconductor substrate made of high and low density layers, exposing the main surfaces of the low density layer side and diffusing selectively the second conducting type substance in the low density layer. CONSTITUTION:N-type high density layers 1', 1'' are formed on an N-type low density layer 11', and one high density layer 1'' is removed therefrom. Then, the first insulating layer 2, 2' are formed, and the first insulating layer 2 and the surface portion 11' are removed from the low density layer 1 side. Thereafter, the second insulating layers 12 is coated thereon, and an opening 14 for diffusing the base region is formed on the layer 12. Subsequently, a P-type conducting impurity is diffused through the opening 14 to form a base region 15. Then, an emitter region 16 is formed.
JP8072879A 1979-06-28 1979-06-28 Manufacture of semiconductor device Pending JPS566469A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8072879A JPS566469A (en) 1979-06-28 1979-06-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8072879A JPS566469A (en) 1979-06-28 1979-06-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS566469A true JPS566469A (en) 1981-01-23

Family

ID=13726423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8072879A Pending JPS566469A (en) 1979-06-28 1979-06-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS566469A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS629624A (en) * 1985-07-08 1987-01-17 Rohm Co Ltd Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123073A (en) * 1974-08-21 1976-02-24 Hitachi Ltd Handotaisochino seizoho
JPS54128291A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123073A (en) * 1974-08-21 1976-02-24 Hitachi Ltd Handotaisochino seizoho
JPS54128291A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS629624A (en) * 1985-07-08 1987-01-17 Rohm Co Ltd Manufacture of semiconductor device

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