JPS5484980A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5484980A
JPS5484980A JP15318377A JP15318377A JPS5484980A JP S5484980 A JPS5484980 A JP S5484980A JP 15318377 A JP15318377 A JP 15318377A JP 15318377 A JP15318377 A JP 15318377A JP S5484980 A JPS5484980 A JP S5484980A
Authority
JP
Japan
Prior art keywords
layer
substrate
type
film
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15318377A
Other languages
Japanese (ja)
Inventor
Yasuo Matsukura
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15318377A priority Critical patent/JPS5484980A/en
Publication of JPS5484980A publication Critical patent/JPS5484980A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0278—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline channels on wafers after forming insulating device isolations

Abstract

PURPOSE: To produce a high-speed MOS device by providing a N-type poly-Si layer on an insulating film provided selectively on a Si substrate and providing a gate electrode through a P-type Si layer and a gate film on the substrate.
CONSTITUTION: Layer 103 is selectively formed around the center of SiO2 film 102 in a concentric ring shape on the surface of P+-type Si substrate 101, and poly-Si layers 104 and 105 are formed on the upper face and are made into a N+-type layer by phosphorus diffusion. P-type Si layer 106 is provided on the substrate between films 102 and 103. SiO2 gate film 107 and poly-Si gate electrode 108 are laminated on layer 106. Al drain electrode 110 and source electrode 111 extending onto SiO2 film 109 are led out from layers 104 and 105, and wiring 112 is formed from the gate electrode. Substrate 101 is provided with electrode 113. In this constitution, there is SiO2 at the bottom of the source and the drain, and the junction capacity is considerably reduced. Since a conduction inversion layer is formed on the surface of a Si single crystal layer, operation characteristic is superior to perform a stable FET operation.
COPYRIGHT: (C)1979,JPO&Japio
JP15318377A 1977-12-19 1977-12-19 Semiconductor device Pending JPS5484980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15318377A JPS5484980A (en) 1977-12-19 1977-12-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15318377A JPS5484980A (en) 1977-12-19 1977-12-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5484980A true JPS5484980A (en) 1979-07-06

Family

ID=15556849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15318377A Pending JPS5484980A (en) 1977-12-19 1977-12-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5484980A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831574A (en) * 1981-08-19 1983-02-24 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831574A (en) * 1981-08-19 1983-02-24 Toshiba Corp Semiconductor device and manufacture thereof

Similar Documents

Publication Publication Date Title
JPS6489365A (en) Semiconductor device
JPS5324277A (en) Semiconductor devic e and its production
JPS5559759A (en) Semiconductor device
JPS5484980A (en) Semiconductor device
JPS572519A (en) Manufacture of semiconductor device
JPS533075A (en) Production of mos structure field effect semiconductor device
JPS5727069A (en) Mos type simiconductor device
JPS5522879A (en) Insulation gate type field effect semiconductor device
JPS5522881A (en) Manufacturing method of semiconductor device
JPS56148863A (en) Manufacture of semiconductor device
JPS5522878A (en) Insulation gate type field effect semiconductor device
JPS5492180A (en) Manufacture of semiconductor device
JPS54142982A (en) Field effect semiconductor device of junction type and its manufacture
JPS5513944A (en) C-mos semiconductor device
JPS56133869A (en) Mos type semiconductor device and manufacture thereof
JPS54101289A (en) Semiconductor device
JPS5563860A (en) Junction-type field-effect device
JPS551179A (en) Complementary mis integrated circuit apparatus
JPS551141A (en) Insulated gate field-effect type transistor
JPS55132062A (en) Semiconductor memory device
JPS5591866A (en) Manufacture of semiconductor device
JPS5327372A (en) Production of s emiconductor device
JPS5479575A (en) Semiconductor integrated-circuit device
JPS5453869A (en) Semiconductor device
JPS5522883A (en) Mis type field effect semiconductor device