JPS5670663A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5670663A
JPS5670663A JP14667979A JP14667979A JPS5670663A JP S5670663 A JPS5670663 A JP S5670663A JP 14667979 A JP14667979 A JP 14667979A JP 14667979 A JP14667979 A JP 14667979A JP S5670663 A JPS5670663 A JP S5670663A
Authority
JP
Japan
Prior art keywords
gate
layer
silicon
oxide film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14667979A
Other languages
Japanese (ja)
Inventor
Keizo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14667979A priority Critical patent/JPS5670663A/en
Publication of JPS5670663A publication Critical patent/JPS5670663A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a silicon MOS which occurs no deterioration of withstand voltage of a gate oxide film by forming a gate electrode of polycrystalline silicon and a gate oxide film of a gate part and the using no etchant for corroding them. CONSTITUTION:A field oxide film 2, a gate oxide film 10, a gate polycrystalline silicon 4 added with impurity, and impurity added layer 5 are formed on a silicon substrate, and a silicon nitride film 11 and layer 12 of Mo or Pt or the like is formed on the entire surface. The layer 12 is selectively etched with an etchant which does not etch the silicon nitride film, the polycrystalline silicon film and the silicon oxide film, then with the layer 12 as a mask the film 11 is etched, and gate opening 7, source opening 8 and drain opening 9 are thus formed. After removing the mask layer 12, metallic wires are formed.
JP14667979A 1979-11-13 1979-11-13 Manufacture of semiconductor device Pending JPS5670663A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14667979A JPS5670663A (en) 1979-11-13 1979-11-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14667979A JPS5670663A (en) 1979-11-13 1979-11-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5670663A true JPS5670663A (en) 1981-06-12

Family

ID=15413137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14667979A Pending JPS5670663A (en) 1979-11-13 1979-11-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5670663A (en)

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