JPS5671966A - Semiconductor system - Google Patents

Semiconductor system

Info

Publication number
JPS5671966A
JPS5671966A JP15018179A JP15018179A JPS5671966A JP S5671966 A JPS5671966 A JP S5671966A JP 15018179 A JP15018179 A JP 15018179A JP 15018179 A JP15018179 A JP 15018179A JP S5671966 A JPS5671966 A JP S5671966A
Authority
JP
Japan
Prior art keywords
potential
electrode
main surface
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15018179A
Other languages
Japanese (ja)
Inventor
Shuhei Iwade
Shuichi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15018179A priority Critical patent/JPS5671966A/en
Publication of JPS5671966A publication Critical patent/JPS5671966A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/311—Design considerations for internal polarisation in bipolar devices

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To facilitate a potential supply in various kinds of mountings by a method wherein in an insulated and separated IC, an electrode to provide a substrate with a potential from a main surface side is installed. CONSTITUTION:Surrounding transistors 2, 3, SiO2 layers 51-54 are connected as a same area and are formed penetrating an n type epitaxial layer 20. A p layer 44 is installed penetrating an n epitaxial layer from a main surface and an electrode 10 is added thereto. A potential of a p type substrate 1 is given from the electrode 10 through a p layer 44 which is installed only for this purpose. With this structure, even when a system is fixed on an insulator or it is fixed in a container by means of a flip chip type, the potential of a substrate can be provided from a main surface side.
JP15018179A 1979-11-19 1979-11-19 Semiconductor system Pending JPS5671966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15018179A JPS5671966A (en) 1979-11-19 1979-11-19 Semiconductor system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15018179A JPS5671966A (en) 1979-11-19 1979-11-19 Semiconductor system

Publications (1)

Publication Number Publication Date
JPS5671966A true JPS5671966A (en) 1981-06-15

Family

ID=15491269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15018179A Pending JPS5671966A (en) 1979-11-19 1979-11-19 Semiconductor system

Country Status (1)

Country Link
JP (1) JPS5671966A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925259A (en) * 1982-08-03 1984-02-09 Nec Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5037386A (en) * 1973-08-06 1975-04-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5037386A (en) * 1973-08-06 1975-04-08

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925259A (en) * 1982-08-03 1984-02-09 Nec Corp Semiconductor device

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