JPS5673464A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5673464A
JPS5673464A JP15092979A JP15092979A JPS5673464A JP S5673464 A JPS5673464 A JP S5673464A JP 15092979 A JP15092979 A JP 15092979A JP 15092979 A JP15092979 A JP 15092979A JP S5673464 A JPS5673464 A JP S5673464A
Authority
JP
Japan
Prior art keywords
region
emitter
central section
minimized
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15092979A
Other languages
Japanese (ja)
Inventor
Hisao Kondo
Michio Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15092979A priority Critical patent/JPS5673464A/en
Publication of JPS5673464A publication Critical patent/JPS5673464A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To avoid the concentration of collector currents to the surroundings of an emitter by a method wherein the concentration of impurities in an active base region contacting with an emitter region forming a transistor is minimized at a central section of the emitter region and increased toward the direction parallel with an emitter-base junction surface. CONSTITUTION:A base region 3 is diffusion-formed on a semiconductor layer 4 functioning as a collector region and coated with a surface protective film 8, a window is made up, a striped emitter region 2 is diffusion-formed in the region 3, and an emitter electrode 5 is attached on the region 2. Windows are built up to the film 8 being located on the region 3 and holding the region 2, striped base electrodes 6 are similarly disposed, and a collector electrode 7 is attached on the back of the layer 4. The concentration of the impurities of the active base region 3 held between the regions 2 and 4 in this constitution is minimized at a central section under the region 2, and increased with separation from the central section. Or the width of the regions 3 is minimized at the central section and maximized at end sections or the width at the end sections is widened.
JP15092979A 1979-11-20 1979-11-20 Semiconductor device Pending JPS5673464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15092979A JPS5673464A (en) 1979-11-20 1979-11-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15092979A JPS5673464A (en) 1979-11-20 1979-11-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5673464A true JPS5673464A (en) 1981-06-18

Family

ID=15507487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15092979A Pending JPS5673464A (en) 1979-11-20 1979-11-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5673464A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0218938A (en) * 1988-07-07 1990-01-23 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0218938A (en) * 1988-07-07 1990-01-23 Fujitsu Ltd Semiconductor device

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