JPS5676532A - Exposure of electron beam - Google Patents

Exposure of electron beam

Info

Publication number
JPS5676532A
JPS5676532A JP15405879A JP15405879A JPS5676532A JP S5676532 A JPS5676532 A JP S5676532A JP 15405879 A JP15405879 A JP 15405879A JP 15405879 A JP15405879 A JP 15405879A JP S5676532 A JPS5676532 A JP S5676532A
Authority
JP
Japan
Prior art keywords
pattern
electron beam
exposure
scanning speed
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15405879A
Other languages
Japanese (ja)
Inventor
Shizuya Matsuura
Bunya Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15405879A priority Critical patent/JPS5676532A/en
Publication of JPS5676532A publication Critical patent/JPS5676532A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To prevent insufficient exposure of microminiature pattern by varying electron beam scanning speed in response to the size of a pattern element when selectively scanning the electron beam on the pattern element forming a predetermined pattern configuration. CONSTITUTION:An output from a computer 1 is applied to a pattern generator 2 and a motor control circuit 8 for controlling a specimen stage 10. When exposing the exposure pattern by decomposing the pattern into pattern elements (rectangular pattern), a function for varying the electron beam scanning speed in response to the size of the pattern element (width of electron beam) is provided at the generator 2, and the scanning speed is decelerated in exposure on the region having small beam width. Since the scanning speed can be thus varied according to the beam width of the element pattern, a sharp drawing pattern can be formed in a short time.
JP15405879A 1979-11-27 1979-11-27 Exposure of electron beam Pending JPS5676532A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15405879A JPS5676532A (en) 1979-11-27 1979-11-27 Exposure of electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15405879A JPS5676532A (en) 1979-11-27 1979-11-27 Exposure of electron beam

Publications (1)

Publication Number Publication Date
JPS5676532A true JPS5676532A (en) 1981-06-24

Family

ID=15575984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15405879A Pending JPS5676532A (en) 1979-11-27 1979-11-27 Exposure of electron beam

Country Status (1)

Country Link
JP (1) JPS5676532A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798528A (en) * 1997-03-11 1998-08-25 International Business Machines Corporation Correction of pattern dependent position errors in electron beam lithography

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380168A (en) * 1976-12-25 1978-07-15 Fujitsu Ltd Exposure method for electronic beam

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380168A (en) * 1976-12-25 1978-07-15 Fujitsu Ltd Exposure method for electronic beam

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798528A (en) * 1997-03-11 1998-08-25 International Business Machines Corporation Correction of pattern dependent position errors in electron beam lithography

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