JPS5772327A - Formation of resist pattern - Google Patents

Formation of resist pattern

Info

Publication number
JPS5772327A
JPS5772327A JP55148944A JP14894480A JPS5772327A JP S5772327 A JPS5772327 A JP S5772327A JP 55148944 A JP55148944 A JP 55148944A JP 14894480 A JP14894480 A JP 14894480A JP S5772327 A JPS5772327 A JP S5772327A
Authority
JP
Japan
Prior art keywords
pattern
parts
exposure
electron beam
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55148944A
Other languages
Japanese (ja)
Inventor
Katsuhiro Kawabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55148944A priority Critical patent/JPS5772327A/en
Publication of JPS5772327A publication Critical patent/JPS5772327A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To obtain a highly accurate and high speed processing of a resist pattern which includes fine pattern parts by combining two types of exposure. CONSTITUTION:When some parts 1 of a whole pattern have fine dimensions not more than 1mum and other parts 2 of the pattern have dimensions large enough to be resoluted by conventional light exposure, the parts 2 of the pattern are exposed first by the light exposure which can process with a high speed, then the fine pattern parts 1 are exposed by an electron beam. As the required time for the electron beam exposure is normally proportional to the number of patterns and the area of the pattern, the fewer the number of exposed parts and the smaller the area of the part, the shorter the required time. Thus, with above method, the time of the electron beam exposure is consumed only for exposure of the small number of, and small area of the fine pattern parts and the required time of the electron beam ex posure can be significantly reduced, so that the processing time can be significantly reduced compared with the electron beam exposure of the whole pattern.
JP55148944A 1980-10-24 1980-10-24 Formation of resist pattern Pending JPS5772327A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148944A JPS5772327A (en) 1980-10-24 1980-10-24 Formation of resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148944A JPS5772327A (en) 1980-10-24 1980-10-24 Formation of resist pattern

Publications (1)

Publication Number Publication Date
JPS5772327A true JPS5772327A (en) 1982-05-06

Family

ID=15464144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148944A Pending JPS5772327A (en) 1980-10-24 1980-10-24 Formation of resist pattern

Country Status (1)

Country Link
JP (1) JPS5772327A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63316055A (en) * 1987-06-19 1988-12-23 Toshiba Corp Manufacture of semiconductor device
JPH0348253A (en) * 1989-07-17 1991-03-01 Nippon Telegr & Teleph Corp <Ntt> Formation of pattern
WO2001011430A1 (en) * 1999-08-10 2001-02-15 Infineon Technologies Ag Transfer of a pattern with a high structural density by multiple exposure of less dense sub-patterns

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63316055A (en) * 1987-06-19 1988-12-23 Toshiba Corp Manufacture of semiconductor device
JPH0348253A (en) * 1989-07-17 1991-03-01 Nippon Telegr & Teleph Corp <Ntt> Formation of pattern
WO2001011430A1 (en) * 1999-08-10 2001-02-15 Infineon Technologies Ag Transfer of a pattern with a high structural density by multiple exposure of less dense sub-patterns
US6627392B2 (en) 1999-08-10 2003-09-30 Infineon Technologies Ag Method of transferring a pattern of high structure density by multiple exposure of less dense partial patterns

Similar Documents

Publication Publication Date Title
JPS52143776A (en) Electron beam exposure apparatus
JPS52119185A (en) Electron beam exposure equipment
JPS5239366A (en) Electronic gun device
JPS57106128A (en) Forming method for pattern
JPS51130222A (en) A process for producing an electron beam resist image
JPS5431282A (en) Pattern formation method
JPS52117077A (en) Electron beam-exposing method
JPS5461931A (en) Forming method of photo resist patterns
JPS56125830A (en) Uniform exposure patterning method in electron beam patterning device
JPS5251870A (en) Electron bean exposure method
JPS5359374A (en) Electron beam exposure unit
JPS52119079A (en) Electron beam exposure
JPS53114676A (en) Electron beam exposure method
JPS51148370A (en) Electron ray exposure method
JPS5228267A (en) Minute processing
JPS53120276A (en) Electron beam exposure method
JPS5741637A (en) Microstep tablet
JPS57115832A (en) Resist pattern formation for fine processing
JPS57132008A (en) Measuring method for pattern size
JPS5731136A (en) Forming method for pattern
JPS5354974A (en) Electron beam exposure system
JPS53127267A (en) Inspection method for pattern
JPS52119179A (en) Electron beam exposing method
JPS53145477A (en) Electron beam exposure method
JPS5339078A (en) Electron beam exposure method