JPS5676562A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS5676562A
JPS5676562A JP15360279A JP15360279A JPS5676562A JP S5676562 A JPS5676562 A JP S5676562A JP 15360279 A JP15360279 A JP 15360279A JP 15360279 A JP15360279 A JP 15360279A JP S5676562 A JPS5676562 A JP S5676562A
Authority
JP
Japan
Prior art keywords
layer
collector
type
self
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15360279A
Other languages
Japanese (ja)
Inventor
Koichi Kanzaki
Minoru Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15360279A priority Critical patent/JPS5676562A/en
Publication of JPS5676562A publication Critical patent/JPS5676562A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an I<2>L which prevents shortcircuit of collector and base employing impurity-containing polycrystalline layer for collector diffusing source and collector wiring, oxidizing and insulating the surface of the polycrystal and then forming a hole with a base electrode by a self-aligning process. CONSTITUTION:An N type high impurity density layer 2 and an N type epitaxial layer 3 are formed on a P type silicon substrate 1, is selectively oxidized, and a field oxide film 4 is formed. Then, with a dielectric layer 8 as a mask injector and base P type layer 5 is selectively diffused. Subsequently, an As-doped polycrystalline seilicon layer is selectively formed, and is oxidized on the surface. Then, the collector is diffused. Thereafter, an oxide film is etched, a hole is opened by self-aligning method only on the thin P type layer 5 of oxide film thick, and aluminum metal wiring 10 is formed thereon. Since the base electrode can the be thus formed by self- aligning method, it can prevent the shortcircuit of the base electrode and the collector region of the I<2>L.
JP15360279A 1979-11-29 1979-11-29 Manufacture of semiconductor integrated circuit Pending JPS5676562A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15360279A JPS5676562A (en) 1979-11-29 1979-11-29 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15360279A JPS5676562A (en) 1979-11-29 1979-11-29 Manufacture of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5676562A true JPS5676562A (en) 1981-06-24

Family

ID=15566064

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15360279A Pending JPS5676562A (en) 1979-11-29 1979-11-29 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5676562A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898956A (en) * 1981-12-09 1983-06-13 Nec Corp Manufacture of semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5091288A (en) * 1973-12-12 1975-07-21
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
JPS53142196A (en) * 1977-05-18 1978-12-11 Hitachi Ltd Bipolar type semiconductor device
JPS5482175A (en) * 1977-12-14 1979-06-30 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor and its manufacture

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5091288A (en) * 1973-12-12 1975-07-21
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
JPS53142196A (en) * 1977-05-18 1978-12-11 Hitachi Ltd Bipolar type semiconductor device
JPS5482175A (en) * 1977-12-14 1979-06-30 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor and its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898956A (en) * 1981-12-09 1983-06-13 Nec Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
US4531282A (en) Bipolar transistors having vertically arrayed collector-base-emitter with novel polycrystalline base electrode surrounding island emitter and method of making same
US3841926A (en) Integrated circuit fabrication process
US4507171A (en) Method for contacting a narrow width PN junction region
US3954523A (en) Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation
US4111724A (en) Method of manufacturing oxide isolated semiconductor device utilizing selective etching technique
US3745647A (en) Fabrication of semiconductor devices
US3886000A (en) Method for controlling dielectric isolation of a semiconductor device
US4271422A (en) CMOS SOS With narrow ring shaped P silicon gate common to both devices
GB1572768A (en) Semiconductor devices
US4408387A (en) Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask
US4045249A (en) Oxide film isolation process
JPS5588368A (en) Preparation of semiconductor device
US3837071A (en) Method of simultaneously making a sigfet and a mosfet
KR870006673A (en) Fabrication process of self-aligned bipolar transistor structure
US3698966A (en) Processes using a masking layer for producing field effect devices having oxide isolation
US3912558A (en) Method of MOS circuit fabrication
JPS56146246A (en) Manufacture of semiconductor integrated circuit
JPS5544713A (en) Semiconductor device
JPS5740975A (en) Manufacture for semiconductor device
US3575742A (en) Method of making a semiconductor device
JPS572519A (en) Manufacture of semiconductor device
JPS5585041A (en) Semiconductor device and its preparation
JPS5676563A (en) Manufacture of semiconductor integrated circuit
JPS6441245A (en) Manufacture of semiconductor device
JPS5688352A (en) Manufacture of semiconductor integrated circuit