JPS5676580A - Lateral field effect transistor and manufacture thereof - Google Patents

Lateral field effect transistor and manufacture thereof

Info

Publication number
JPS5676580A
JPS5676580A JP15479779A JP15479779A JPS5676580A JP S5676580 A JPS5676580 A JP S5676580A JP 15479779 A JP15479779 A JP 15479779A JP 15479779 A JP15479779 A JP 15479779A JP S5676580 A JPS5676580 A JP S5676580A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
recesses
electrode
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15479779A
Other languages
Japanese (ja)
Inventor
Michihiro Kobiki
Manabu Watase
Yasuro Mitsui
Mutsuyuki Otsubo
Takashi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15479779A priority Critical patent/JPS5676580A/en
Publication of JPS5676580A publication Critical patent/JPS5676580A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To increase the withstand voltage of a drain in a field effect transistor by forming recesses at both sides of a gate electrode formed on a main surface and disposing source and drain electrodes in the recesses. CONSTITUTION:An active layer 2 is formed by epitaxial growth on a semi-insulating GaAs substrate 1, and grooves 8 having oblique surfaces 8a are formed by selective etching process. A gate electrode 5 is formed on the projection interposed between the recesses 8, electron flows from the source electrode 3 and source electrode 3 forming the drain electrode 4 are diffused to the side 4a and bottom 4b of the drain electrode 4 on the bottom of the groove 8, thereby realizing the high withstand voltage.
JP15479779A 1979-11-28 1979-11-28 Lateral field effect transistor and manufacture thereof Pending JPS5676580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15479779A JPS5676580A (en) 1979-11-28 1979-11-28 Lateral field effect transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15479779A JPS5676580A (en) 1979-11-28 1979-11-28 Lateral field effect transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5676580A true JPS5676580A (en) 1981-06-24

Family

ID=15592091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15479779A Pending JPS5676580A (en) 1979-11-28 1979-11-28 Lateral field effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5676580A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005129696A (en) * 2003-10-23 2005-05-19 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005129696A (en) * 2003-10-23 2005-05-19 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method thereof

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