JPS574169A - Gaas field-effect transistor - Google Patents

Gaas field-effect transistor

Info

Publication number
JPS574169A
JPS574169A JP7816680A JP7816680A JPS574169A JP S574169 A JPS574169 A JP S574169A JP 7816680 A JP7816680 A JP 7816680A JP 7816680 A JP7816680 A JP 7816680A JP S574169 A JPS574169 A JP S574169A
Authority
JP
Japan
Prior art keywords
layer
gate electrode
type
added
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7816680A
Other languages
Japanese (ja)
Inventor
Hisashi Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7816680A priority Critical patent/JPS574169A/en
Publication of JPS574169A publication Critical patent/JPS574169A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To uniformalize characteristics by a method wherein a Cr added layer or a P type layer is formed in predetermined depth in an N type channel under a gate electrode without etching the surface of an N type operating layer of the GaAs FET, and used as an insulating layer. CONSTITUTION:An N<-> buffer layer 12 and an N layer 13 are formed on an insulating GaAs substrate 11 to which Cr is added in epitaxial shapes. The Cr ion injected layer 17 is made up in prescribed depth, the Al gate electrode 14 is built up on the surface and a Schottky barrier is formed between the N layer 13 and the gate electrode, and ohmic AuGe source electrode 15 and drain electrode 16 are attached at both sides. The FET, characteristics thereof are uniform and which is suitable for changing into an integrated circuit, is obtained because the width W of the channel can be controlled by injecting Cr ions.
JP7816680A 1980-06-10 1980-06-10 Gaas field-effect transistor Pending JPS574169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7816680A JPS574169A (en) 1980-06-10 1980-06-10 Gaas field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7816680A JPS574169A (en) 1980-06-10 1980-06-10 Gaas field-effect transistor

Publications (1)

Publication Number Publication Date
JPS574169A true JPS574169A (en) 1982-01-09

Family

ID=13654340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7816680A Pending JPS574169A (en) 1980-06-10 1980-06-10 Gaas field-effect transistor

Country Status (1)

Country Link
JP (1) JPS574169A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879772A (en) * 1981-11-06 1983-05-13 Sumitomo Electric Ind Ltd Short gate field effect transistor
JPS61164415A (en) * 1985-01-16 1986-07-25 古河電気工業株式会社 Phase arrangement method of in-phase two strip flat laid power cable
JPS61199667A (en) * 1985-02-28 1986-09-04 Oki Electric Ind Co Ltd GaAs field effect transistor
EP0287811A1 (en) * 1987-04-23 1988-10-26 International Business Machines Corporation Field effect transistor and method of making
CN113451387A (en) * 2020-03-24 2021-09-28 清华大学 Buffer region variable doping structure for overvoltage breakdown function and semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080086A (en) * 1973-11-12 1975-06-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080086A (en) * 1973-11-12 1975-06-28

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879772A (en) * 1981-11-06 1983-05-13 Sumitomo Electric Ind Ltd Short gate field effect transistor
JPS61164415A (en) * 1985-01-16 1986-07-25 古河電気工業株式会社 Phase arrangement method of in-phase two strip flat laid power cable
JPS61199667A (en) * 1985-02-28 1986-09-04 Oki Electric Ind Co Ltd GaAs field effect transistor
EP0287811A1 (en) * 1987-04-23 1988-10-26 International Business Machines Corporation Field effect transistor and method of making
CN113451387A (en) * 2020-03-24 2021-09-28 清华大学 Buffer region variable doping structure for overvoltage breakdown function and semiconductor device
WO2021189838A1 (en) * 2020-03-24 2021-09-30 清华大学 Buffer region variable doping structure used for overvoltage breakdown function, and semiconductor device
CN113451387B (en) * 2020-03-24 2022-12-23 清华大学 Buffer region variable doping structure for overvoltage breakdown function and semiconductor device

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