JPS5676584A - Manufacture of photoelectric converter - Google Patents
Manufacture of photoelectric converterInfo
- Publication number
- JPS5676584A JPS5676584A JP15544179A JP15544179A JPS5676584A JP S5676584 A JPS5676584 A JP S5676584A JP 15544179 A JP15544179 A JP 15544179A JP 15544179 A JP15544179 A JP 15544179A JP S5676584 A JPS5676584 A JP S5676584A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric converter
- photoelectric
- isolating
- manufacture
- photoelectric converters
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain a preferable characteristic of a photoelectric converter without affecting other photoelectric converter by isolating a number of photodiodes formed on one substrate via grooves. CONSTITUTION:Reverse-conductivity type impurity containing boron or the like is doped on an N type semiconductor substrate 1, P type regions 2, 3, 4 are formed, N<+> type regions 5, 6 are formed thereon, and a P-N photoelectric converter. Thereafter, isolating grooves 16, 17, 18 are formed by selective etching process, and the photoelectric converters are respectively isolated. Since these photoelectric converters have isolating layers even if the carriers are spattered in the semiconductor, the he photocurrent does not affect other photoelectric converters, thereby the obtaining preferable characteristics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15544179A JPS5676584A (en) | 1979-11-27 | 1979-11-27 | Manufacture of photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15544179A JPS5676584A (en) | 1979-11-27 | 1979-11-27 | Manufacture of photoelectric converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5676584A true JPS5676584A (en) | 1981-06-24 |
Family
ID=15606093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15544179A Pending JPS5676584A (en) | 1979-11-27 | 1979-11-27 | Manufacture of photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5676584A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003124483A (en) * | 2001-10-17 | 2003-04-25 | Toyota Motor Corp | Photovoltaic element |
-
1979
- 1979-11-27 JP JP15544179A patent/JPS5676584A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003124483A (en) * | 2001-10-17 | 2003-04-25 | Toyota Motor Corp | Photovoltaic element |
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