JPS5680126A - Formation of monocrystalline semiconductor - Google Patents

Formation of monocrystalline semiconductor

Info

Publication number
JPS5680126A
JPS5680126A JP15678979A JP15678979A JPS5680126A JP S5680126 A JPS5680126 A JP S5680126A JP 15678979 A JP15678979 A JP 15678979A JP 15678979 A JP15678979 A JP 15678979A JP S5680126 A JPS5680126 A JP S5680126A
Authority
JP
Japan
Prior art keywords
film
monocrystalline
crystal grain
grain boundaries
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15678979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6322056B2 (2
Inventor
Seiichi Iwamatsu
Mitsuru Ogawa
Kenichi Asanami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP15678979A priority Critical patent/JPS5680126A/ja
Publication of JPS5680126A publication Critical patent/JPS5680126A/ja
Publication of JPS6322056B2 publication Critical patent/JPS6322056B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation

Landscapes

  • Recrystallisation Techniques (AREA)
JP15678979A 1979-12-05 1979-12-05 Formation of monocrystalline semiconductor Granted JPS5680126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15678979A JPS5680126A (en) 1979-12-05 1979-12-05 Formation of monocrystalline semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15678979A JPS5680126A (en) 1979-12-05 1979-12-05 Formation of monocrystalline semiconductor

Publications (2)

Publication Number Publication Date
JPS5680126A true JPS5680126A (en) 1981-07-01
JPS6322056B2 JPS6322056B2 (2) 1988-05-10

Family

ID=15635334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15678979A Granted JPS5680126A (en) 1979-12-05 1979-12-05 Formation of monocrystalline semiconductor

Country Status (1)

Country Link
JP (1) JPS5680126A (2)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837913A (ja) * 1981-08-28 1983-03-05 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS58175827A (ja) * 1982-04-07 1983-10-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS61127118A (ja) * 1984-11-26 1986-06-14 Sony Corp 半導体薄膜の形成方法
JPS61131413A (ja) * 1984-11-30 1986-06-19 Sony Corp 半導体薄膜の形成方法
US5130261A (en) * 1989-09-11 1992-07-14 Kabushiki Kaisha Toshiba Method of rendering the impurity concentration of a semiconductor wafer uniform
JPH07231095A (ja) * 1994-02-01 1995-08-29 Lg Semicon Co Ltd 薄膜トランジスタの製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0423046U (2) * 1990-06-15 1992-02-25

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837913A (ja) * 1981-08-28 1983-03-05 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS58175827A (ja) * 1982-04-07 1983-10-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS61127118A (ja) * 1984-11-26 1986-06-14 Sony Corp 半導体薄膜の形成方法
JPS61131413A (ja) * 1984-11-30 1986-06-19 Sony Corp 半導体薄膜の形成方法
US5130261A (en) * 1989-09-11 1992-07-14 Kabushiki Kaisha Toshiba Method of rendering the impurity concentration of a semiconductor wafer uniform
JPH07231095A (ja) * 1994-02-01 1995-08-29 Lg Semicon Co Ltd 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
JPS6322056B2 (2) 1988-05-10

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