JPS5685751A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPS5685751A JPS5685751A JP16251579A JP16251579A JPS5685751A JP S5685751 A JPS5685751 A JP S5685751A JP 16251579 A JP16251579 A JP 16251579A JP 16251579 A JP16251579 A JP 16251579A JP S5685751 A JPS5685751 A JP S5685751A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- protrusion
- visor
- occurrence
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To obtain a fine pattern by forming a Cr layer, a CrO layer and a Cr layer on a glass substrate in this order to prevent the formation of a visor-shaped protrusion in etching and the occurrence of indentation due to a fall of the protrusion. CONSTITUTION:Cr layer 2 is formed on glass substrate 1, CrO layer 3 on layer 2, and about 20-30Angstrom Cr layer 2' on layer 3 by vapor deposition or other method. On layer 2' a photoresist is formed, and after carrying out patternwise exposure and development, layers 2, 3, 2' are simultaneously etched with a mixed aqueous soln. of ceric ammonium nitrate and perchloric acid using the resulting resist as a mask. Layer 2' prevents layer 3 from protruding in the form of visor B owing to the etching speed difference between layers 2, 3, and the occurrence of indentation due to a partial fall of the protrusion is prevented. Thus, pattern A with high resolving power is obtd.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16251579A JPS5685751A (en) | 1979-12-14 | 1979-12-14 | Photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16251579A JPS5685751A (en) | 1979-12-14 | 1979-12-14 | Photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5685751A true JPS5685751A (en) | 1981-07-13 |
Family
ID=15756081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16251579A Pending JPS5685751A (en) | 1979-12-14 | 1979-12-14 | Photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5685751A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017161931A (en) * | 2017-05-17 | 2017-09-14 | Hoya株式会社 | Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method |
| JP2018087998A (en) * | 2014-03-30 | 2018-06-07 | Hoya株式会社 | Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5451831A (en) * | 1977-09-30 | 1979-04-24 | Konishiroku Photo Ind Co Ltd | Photomask material |
-
1979
- 1979-12-14 JP JP16251579A patent/JPS5685751A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5451831A (en) * | 1977-09-30 | 1979-04-24 | Konishiroku Photo Ind Co Ltd | Photomask material |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018087998A (en) * | 2014-03-30 | 2018-06-07 | Hoya株式会社 | Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method |
| JP2017161931A (en) * | 2017-05-17 | 2017-09-14 | Hoya株式会社 | Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method |
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