JPS5687667A - Reactive ion etching method - Google Patents

Reactive ion etching method

Info

Publication number
JPS5687667A
JPS5687667A JP16473079A JP16473079A JPS5687667A JP S5687667 A JPS5687667 A JP S5687667A JP 16473079 A JP16473079 A JP 16473079A JP 16473079 A JP16473079 A JP 16473079A JP S5687667 A JPS5687667 A JP S5687667A
Authority
JP
Japan
Prior art keywords
sample
silicon
bonds
ion etching
deposit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16473079A
Other languages
Japanese (ja)
Other versions
JPS6225757B2 (en
Inventor
Masahiro Shibagaki
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16473079A priority Critical patent/JPS5687667A/en
Publication of JPS5687667A publication Critical patent/JPS5687667A/en
Publication of JPS6225757B2 publication Critical patent/JPS6225757B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent the formation of a deposit on a silicon surface caused by a chlorine-contg. mixed gas in the plasma etching of silicon or the like by coating electrodes with carbon or org. material layers having C-F or C-H bonds. CONSTITUTION:In this plasma etching device, the surface of lower electrode 8 holding sample 10 such as silicon and the surface of upper electrode 7 are coated with coating material 26 such as carbon plates, ''Teflon '' having C-F bonds or polyester having C-H bonds. By applying high frequency power to electrodes 7, 8 plasma of a mixed gas such as CF4+Cl2 is formed to etch sample 10. By this method no deposit is formed on the surface of sample 10 during the ion etching, high etching selectivity is attained, and the damage of sample 10 to a silicon element or the like is relieved.
JP16473079A 1979-12-20 1979-12-20 Reactive ion etching method Granted JPS5687667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16473079A JPS5687667A (en) 1979-12-20 1979-12-20 Reactive ion etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16473079A JPS5687667A (en) 1979-12-20 1979-12-20 Reactive ion etching method

Publications (2)

Publication Number Publication Date
JPS5687667A true JPS5687667A (en) 1981-07-16
JPS6225757B2 JPS6225757B2 (en) 1987-06-04

Family

ID=15798805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16473079A Granted JPS5687667A (en) 1979-12-20 1979-12-20 Reactive ion etching method

Country Status (1)

Country Link
JP (1) JPS5687667A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144542A (en) * 1980-03-17 1981-11-10 Ibm Method of selectively reactively ion etching polycrystalline silicon for monocrsytalline silicon
US4431473A (en) * 1981-07-17 1984-02-14 Tokyo Shibaura Denki Kabushiki Kaisha RIE Apparatus utilizing a shielded magnetron to enhance etching
JPS61174633A (en) * 1985-01-29 1986-08-06 Ulvac Corp Vacuum discharge treating device
JPS6380535A (en) * 1986-09-24 1988-04-11 Tokyo Electron Ltd Plasma processing apparatus
JPS63179522A (en) * 1987-01-21 1988-07-23 Tokyo Electron Ltd Ashing apparatus
JPS6489518A (en) * 1987-09-30 1989-04-04 Nec Corp Parallel flat board electrode type plasma etching device
JPH01227438A (en) * 1988-03-07 1989-09-11 Tokyo Electron Ltd Base plate for semiconductor substrate
JPH03138381A (en) * 1989-10-20 1991-06-12 Ibiden Co Ltd Electrode plate for plasma etching
JPH0425230U (en) * 1990-06-25 1992-02-28
US5268200A (en) * 1990-05-21 1993-12-07 Applied Materials, Inc. Method of forming plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
JPH06204179A (en) * 1992-10-27 1994-07-22 Tokyo Electron Ltd Plasma processing method
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
JP2002520835A (en) * 1998-07-13 2002-07-09 エーケーティー株式会社 Gas distribution plate for processing equipment
US10262834B2 (en) 2009-10-13 2019-04-16 Lam Research Corporation Edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144542A (en) * 1980-03-17 1981-11-10 Ibm Method of selectively reactively ion etching polycrystalline silicon for monocrsytalline silicon
US4431473A (en) * 1981-07-17 1984-02-14 Tokyo Shibaura Denki Kabushiki Kaisha RIE Apparatus utilizing a shielded magnetron to enhance etching
JPS61174633A (en) * 1985-01-29 1986-08-06 Ulvac Corp Vacuum discharge treating device
JPS6380535A (en) * 1986-09-24 1988-04-11 Tokyo Electron Ltd Plasma processing apparatus
JPS63179522A (en) * 1987-01-21 1988-07-23 Tokyo Electron Ltd Ashing apparatus
JPS6489518A (en) * 1987-09-30 1989-04-04 Nec Corp Parallel flat board electrode type plasma etching device
JPH01227438A (en) * 1988-03-07 1989-09-11 Tokyo Electron Ltd Base plate for semiconductor substrate
JPH03138381A (en) * 1989-10-20 1991-06-12 Ibiden Co Ltd Electrode plate for plasma etching
US5268200A (en) * 1990-05-21 1993-12-07 Applied Materials, Inc. Method of forming plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
JPH0425230U (en) * 1990-06-25 1992-02-28
JPH06204179A (en) * 1992-10-27 1994-07-22 Tokyo Electron Ltd Plasma processing method
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
JP2002520835A (en) * 1998-07-13 2002-07-09 エーケーティー株式会社 Gas distribution plate for processing equipment
US10262834B2 (en) 2009-10-13 2019-04-16 Lam Research Corporation Edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly

Also Published As

Publication number Publication date
JPS6225757B2 (en) 1987-06-04

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