JPS5688367A - Method of forming electrode - Google Patents

Method of forming electrode

Info

Publication number
JPS5688367A
JPS5688367A JP12807780A JP12807780A JPS5688367A JP S5688367 A JPS5688367 A JP S5688367A JP 12807780 A JP12807780 A JP 12807780A JP 12807780 A JP12807780 A JP 12807780A JP S5688367 A JPS5688367 A JP S5688367A
Authority
JP
Japan
Prior art keywords
forming electrode
electrode
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12807780A
Other languages
English (en)
Inventor
Reimondo Gaanachie Richiyaado
Maku Arupin Kenii Donarudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5688367A publication Critical patent/JPS5688367A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP12807780A 1979-12-17 1980-09-17 Method of forming electrode Pending JPS5688367A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/103,981 US4295924A (en) 1979-12-17 1979-12-17 Method for providing self-aligned conductor in a V-groove device

Publications (1)

Publication Number Publication Date
JPS5688367A true JPS5688367A (en) 1981-07-17

Family

ID=22298059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12807780A Pending JPS5688367A (en) 1979-12-17 1980-09-17 Method of forming electrode

Country Status (5)

Country Link
US (1) US4295924A (ja)
EP (1) EP0030640B1 (ja)
JP (1) JPS5688367A (ja)
CA (1) CA1166761A (ja)
DE (1) DE3072095D1 (ja)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56146247A (en) * 1980-03-25 1981-11-13 Fujitsu Ltd Manufacture of semiconductor device
US4803528A (en) * 1980-07-28 1989-02-07 General Electric Company Insulating film having electrically conducting portions
NL8005673A (nl) * 1980-10-15 1982-05-03 Philips Nv Veldeffecttransistor en werkwijze ter vervaardiging van een dergelijke veldeffecttransistor.
US4409609A (en) * 1981-03-18 1983-10-11 Fujitsu Limited Semiconductor device and method of manufacturing the same
CA1188822A (en) * 1981-07-31 1985-06-11 John C. White Method for producing a misfet and a misfet produced thereby
FR2513016A1 (fr) * 1981-09-14 1983-03-18 Radiotechnique Compelec Transistor v mos haute tension, et son procede de fabrication
JPS58106870A (ja) * 1981-12-18 1983-06-25 Nissan Motor Co Ltd パワ−ｍｏｓｆｅｔ
NL8200532A (nl) * 1982-02-12 1983-09-01 Philips Nv Reactief ionen etsen van een voorwerp van ferriet.
FR2525389A1 (fr) * 1982-04-14 1983-10-21 Commissariat Energie Atomique Procede de positionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
JPH073858B2 (ja) * 1984-04-11 1995-01-18 株式会社日立製作所 半導体装置の製造方法
US4811067A (en) * 1986-05-02 1989-03-07 International Business Machines Corporation High density vertically structured memory
US4769786A (en) * 1986-07-15 1988-09-06 International Business Machines Corporation Two square memory cells
USRE33972E (en) * 1986-07-15 1992-06-23 International Business Machines Corporation Two square memory cells
US4801992A (en) * 1986-12-01 1989-01-31 Motorola Inc. Three dimensional interconnected integrated circuit
US5082795A (en) * 1986-12-05 1992-01-21 General Electric Company Method of fabricating a field effect semiconductor device having a self-aligned structure
US4822755A (en) * 1988-04-25 1989-04-18 Xerox Corporation Method of fabricating large area semiconductor arrays
KR920000708B1 (ko) * 1988-07-22 1992-01-20 현대전자산업 주식회사 포토레지스트 에치백 기술을 이용한 트렌치 캐패시터 형성방법
US5001525A (en) * 1989-03-27 1991-03-19 International Business Machines Corporation Two square memory cells having highly conductive word lines
US5275965A (en) * 1992-11-25 1994-01-04 Micron Semiconductor, Inc. Trench isolation using gated sidewalls
US5684313A (en) * 1996-02-20 1997-11-04 Kenney; Donald M. Vertical precharge structure for DRAM
US6008089A (en) * 1997-12-24 1999-12-28 United Semiconductor Corp. Method of fabricating a split gate flash memory device
US6156611A (en) * 1998-07-20 2000-12-05 Motorola, Inc. Method of fabricating vertical FET with sidewall gate electrode
US6078078A (en) * 1998-10-01 2000-06-20 Advanced Micro Devices, Inc. V-gate transistor
US6222230B1 (en) 1998-12-03 2001-04-24 Advanced Micro Devices, Inc. Method of making an elevated source/drain with enhanced graded sidewalls for transistor scaling integrated with spacer formation
US6605534B1 (en) 2000-06-28 2003-08-12 International Business Machines Corporation Selective deposition of a conductive material
US7632733B2 (en) * 2006-04-29 2009-12-15 Alpha & Omega Semiconductor, Inc. Polysilicon control etch-back indicator
US8327926B2 (en) 2008-03-26 2012-12-11 Robertson Intellectual Properties, LLC Method for removing a consumable downhole tool
US8816431B2 (en) 2012-03-09 2014-08-26 Fairchild Semiconductor Corporation Shielded gate MOSFET device with a funnel-shaped trench
US12610605B2 (en) * 2022-11-28 2026-04-21 Globalfoundries U.S. Inc. IC structure with gate electrode fully within V-shaped cavity
CN115831996A (zh) * 2022-12-28 2023-03-21 上海集成电路装备材料产业创新中心有限公司 一种背照式设备中衬垫的制备方法及背照式设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS538076A (en) * 1976-07-12 1978-01-25 Hitachi Ltd Production of mis semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
US4120744A (en) * 1971-06-25 1978-10-17 Texas Instruments Incorporated Method of fabricating a thermal display device
US3892608A (en) * 1974-02-28 1975-07-01 Motorola Inc Method for filling grooves and moats used on semiconductor devices
US3998673A (en) * 1974-08-16 1976-12-21 Pel Chow Method for forming electrically-isolated regions in integrated circuits utilizing selective epitaxial growth
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
US4163988A (en) * 1978-01-30 1979-08-07 Xerox Corporation Split gate V groove FET
US4222816A (en) * 1978-12-26 1980-09-16 International Business Machines Corporation Method for reducing parasitic capacitance in integrated circuit structures

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS538076A (en) * 1976-07-12 1978-01-25 Hitachi Ltd Production of mis semiconductor device

Also Published As

Publication number Publication date
CA1166761A (en) 1984-05-01
US4295924A (en) 1981-10-20
DE3072095D1 (en) 1988-06-30
EP0030640A3 (en) 1985-11-21
EP0030640A2 (de) 1981-06-24
EP0030640B1 (de) 1988-05-25

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