JPS538076A - Production of mis semiconductor device - Google Patents

Production of mis semiconductor device

Info

Publication number
JPS538076A
JPS538076A JP8199276A JP8199276A JPS538076A JP S538076 A JPS538076 A JP S538076A JP 8199276 A JP8199276 A JP 8199276A JP 8199276 A JP8199276 A JP 8199276A JP S538076 A JPS538076 A JP S538076A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
mis semiconductor
forming
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8199276A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8199276A priority Critical patent/JPS538076A/en
Publication of JPS538076A publication Critical patent/JPS538076A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To readily produce a NOSLSI of a high dielectric strength by forming V-grooves on Si substrate surface, forming gate electrodes and gate insulation film through self-alignment and making a highly accurate and fine offset gate structure.
COPYRIGHT: (C)1978,JPO&Japio
JP8199276A 1976-07-12 1976-07-12 Production of mis semiconductor device Pending JPS538076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8199276A JPS538076A (en) 1976-07-12 1976-07-12 Production of mis semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8199276A JPS538076A (en) 1976-07-12 1976-07-12 Production of mis semiconductor device

Publications (1)

Publication Number Publication Date
JPS538076A true JPS538076A (en) 1978-01-25

Family

ID=13761961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8199276A Pending JPS538076A (en) 1976-07-12 1976-07-12 Production of mis semiconductor device

Country Status (1)

Country Link
JP (1) JPS538076A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113333A (en) * 1978-12-27 1980-09-01 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPS5688367A (en) * 1979-12-17 1981-07-17 Ibm Method of forming electrode
JPS5713770A (en) * 1980-06-12 1982-01-23 Ibm V-mos device with self centering multiple electrodes
US5275965A (en) * 1992-11-25 1994-01-04 Micron Semiconductor, Inc. Trench isolation using gated sidewalls

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113333A (en) * 1978-12-27 1980-09-01 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPS5688367A (en) * 1979-12-17 1981-07-17 Ibm Method of forming electrode
JPS5713770A (en) * 1980-06-12 1982-01-23 Ibm V-mos device with self centering multiple electrodes
US5275965A (en) * 1992-11-25 1994-01-04 Micron Semiconductor, Inc. Trench isolation using gated sidewalls

Similar Documents

Publication Publication Date Title
JPS52156576A (en) Production of mis semiconductor device
JPS5379383A (en) Production of semiconductor device
JPS53115173A (en) Production of semiconductor device
JPS5357773A (en) Semiconductor device
JPS53135582A (en) Semiconductor device and its manufacture
JPS5267963A (en) Manufacture of semiconductor unit
JPS52130567A (en) Preparation of semiconductor device
JPS5283071A (en) Production of semiconductor device
JPS53145485A (en) Production of semiconductor device having serrations on semiconductor surface
JPS5265682A (en) Semiconductor device
JPS5272186A (en) Production of mis type semiconductor device
JPS547867A (en) Manufacture for semiconductor device
JPS52123878A (en) Mos type semiconductor device and its production process
JPS5210070A (en) Method for manufacturing silicon semiconductor device
JPS5247685A (en) Process for production of mos type semiconductor device
JPS5251872A (en) Production of semiconductor device
JPS5384691A (en) Production of semiconductor device
JPS51148377A (en) Manufacturing method of mis type semiconductor device
JPS5423483A (en) Manufacture for semiconductor device
JPS5258372A (en) Semiconductor device and its production
JPS52117083A (en) Semiconductor device
JPS52106694A (en) Preparation for semiconductor device
JPS52141183A (en) Production of semiconductor devices
JPS52151572A (en) Insulated gate semiconductor device and its production
JPS5283061A (en) Production of semiconductor device