JPS568848A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS568848A
JPS568848A JP8425779A JP8425779A JPS568848A JP S568848 A JPS568848 A JP S568848A JP 8425779 A JP8425779 A JP 8425779A JP 8425779 A JP8425779 A JP 8425779A JP S568848 A JPS568848 A JP S568848A
Authority
JP
Japan
Prior art keywords
region
wiring
films
polycrystalline
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8425779A
Other languages
Japanese (ja)
Other versions
JPS6154253B2 (en
Inventor
Mitsutaka Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8425779A priority Critical patent/JPS568848A/en
Publication of JPS568848A publication Critical patent/JPS568848A/en
Publication of JPS6154253B2 publication Critical patent/JPS6154253B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To facilitate the formation of a low resistance polycrystalline Si wiring and a wiring within an element by simultaneous impurity diffusion into a polycrystalline Si region and a wiring region within an element without any influence on source and drain regions. CONSTITUTION:An Si nitride film 34 is formed on a P-type Si stubstrate 31, and by utilizing it as a mask a channel stopper 32 and a field oxide film 33 are formed. Next after the film 34 of a region where an element region is to be formed is removed, an Si oxide film 35 which is to be a gate insulation is formed, and on it patterned polycrystalline Si layers 36G, 36C and Si nitride films 37G, 37C are formed. Next by utilizing films 34, 37G, 36G as a mask an N-type impurity diffusion region 38 which has shallow junction depth and is to be source and drain is formed. Next films 34, 37G, 37C are removed and in the same time when an N- type diffusion layer 40 which has deep junction depth and is to be a wiring within an element is formed, films 36G and 36C are also changed to have a low resistance through diffusion of an N-type impurity.
JP8425779A 1979-07-03 1979-07-03 Manufacture of semiconductor integrated circuit Granted JPS568848A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8425779A JPS568848A (en) 1979-07-03 1979-07-03 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8425779A JPS568848A (en) 1979-07-03 1979-07-03 Manufacture of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS568848A true JPS568848A (en) 1981-01-29
JPS6154253B2 JPS6154253B2 (en) 1986-11-21

Family

ID=13825394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8425779A Granted JPS568848A (en) 1979-07-03 1979-07-03 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS568848A (en)

Also Published As

Publication number Publication date
JPS6154253B2 (en) 1986-11-21

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