JPS5690565A - Schottky barrier diode - Google Patents

Schottky barrier diode

Info

Publication number
JPS5690565A
JPS5690565A JP16850779A JP16850779A JPS5690565A JP S5690565 A JPS5690565 A JP S5690565A JP 16850779 A JP16850779 A JP 16850779A JP 16850779 A JP16850779 A JP 16850779A JP S5690565 A JPS5690565 A JP S5690565A
Authority
JP
Japan
Prior art keywords
layer
schottky barrier
diode
region
ohmic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16850779A
Other languages
Japanese (ja)
Other versions
JPS5949713B2 (en
Inventor
Yuki Shimada
Kenji Hideshima
Katsunori Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
NEC Corp
NTT Inc
Original Assignee
Shindengen Electric Manufacturing Co Ltd
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd, NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP54168507A priority Critical patent/JPS5949713B2/en
Publication of JPS5690565A publication Critical patent/JPS5690565A/en
Publication of JPS5949713B2 publication Critical patent/JPS5949713B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a diode functioning at high speed by a method wherein a P<+> layer is formed on a surface of a ringed I layer on an N layer, a common electrode is attached, the contacts of both the N layer and a Schottky barrier property and both the I layer and an ohmic property are made up, and an ohmic electrode is fitted on the back. CONSTITUTION:An I (intrinsic semiconductor) layer 45 is circularly formed on a main surface of an N<-> layer 42 on an N<+> type substrate 41, and a P<+> layer 46 is made up in the region. A metal layer 50 is attached in common on the surfaces of a region 47 surrounded by the I layer and the P<+> layer 46, and both the region 47 and a Schottky barrier contact 51, both the layer 46 and an ohmic contact 52 and both the substrate 41 and an ohmic contact 55 are built up. A layer 56 is an insulating layer. According to this constitution, a composite element in which a Schottky barrier diode and a PIN diode are connected in parallel in the same polarity is formed, a depletion layer finally expands to the whole region 47 and currents in the reverse direction do not flow when the electrode 50 is made negative and voltage is applied, and a diode is obtained which has characteristics more superior than a normal Schottky barrier diode.
JP54168507A 1979-12-25 1979-12-25 shotgun barrier diode Expired JPS5949713B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54168507A JPS5949713B2 (en) 1979-12-25 1979-12-25 shotgun barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54168507A JPS5949713B2 (en) 1979-12-25 1979-12-25 shotgun barrier diode

Publications (2)

Publication Number Publication Date
JPS5690565A true JPS5690565A (en) 1981-07-22
JPS5949713B2 JPS5949713B2 (en) 1984-12-04

Family

ID=15869331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54168507A Expired JPS5949713B2 (en) 1979-12-25 1979-12-25 shotgun barrier diode

Country Status (1)

Country Link
JP (1) JPS5949713B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4607270A (en) * 1983-06-16 1986-08-19 Kabushiki Kaisha Toshiba Schottky barrier diode with guard ring
US5338966A (en) * 1989-09-21 1994-08-16 Toko Kabushiki Kaisha Variable capacitance diode device
US7528459B2 (en) * 2003-05-27 2009-05-05 Nxp B.V. Punch-through diode and method of processing the same
JP2009535853A (en) * 2006-05-02 2009-10-01 セミサウス ラボラトリーズ インコーポレイテッド Semiconductor device with surge current protection and manufacturing method thereof
CN103178095A (en) * 2011-12-26 2013-06-26 比亚迪股份有限公司 High temperature schottky diode
WO2016071969A1 (en) * 2014-11-05 2016-05-12 新電元工業株式会社 Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4607270A (en) * 1983-06-16 1986-08-19 Kabushiki Kaisha Toshiba Schottky barrier diode with guard ring
US5338966A (en) * 1989-09-21 1994-08-16 Toko Kabushiki Kaisha Variable capacitance diode device
US7528459B2 (en) * 2003-05-27 2009-05-05 Nxp B.V. Punch-through diode and method of processing the same
JP2009535853A (en) * 2006-05-02 2009-10-01 セミサウス ラボラトリーズ インコーポレイテッド Semiconductor device with surge current protection and manufacturing method thereof
CN103178095A (en) * 2011-12-26 2013-06-26 比亚迪股份有限公司 High temperature schottky diode
WO2016071969A1 (en) * 2014-11-05 2016-05-12 新電元工業株式会社 Semiconductor device
US9947806B2 (en) 2014-11-05 2018-04-17 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
JPS5949713B2 (en) 1984-12-04

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