JPS5772389A - Constant-voltage diode - Google Patents

Constant-voltage diode

Info

Publication number
JPS5772389A
JPS5772389A JP55148389A JP14838980A JPS5772389A JP S5772389 A JPS5772389 A JP S5772389A JP 55148389 A JP55148389 A JP 55148389A JP 14838980 A JP14838980 A JP 14838980A JP S5772389 A JPS5772389 A JP S5772389A
Authority
JP
Japan
Prior art keywords
regions
2alpha
constant
voltage
2epsilon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55148389A
Other languages
Japanese (ja)
Inventor
Kensuke Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55148389A priority Critical patent/JPS5772389A/en
Publication of JPS5772389A publication Critical patent/JPS5772389A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain the constant-voltage diode having excellent constant-voltage characteristics by utilizing a fact that the characteristics in the forward direction of the diode indicate constant-voltage characteristics the same as Zener characteristics in a current region of 50-500mA/mm.<2>. CONSTITUTION:A semiconductor pellet 2 consists of an N type conductive region 2alpha at the center, P type conductive regions 2beta, 2gamma at the central sections of both main surfaces and N type conductive regions 2delta, 2epsilon having high impurity concentration at the side sections of both main surfaces, and the regions 2delta, 2epsilon are formed for ohmic contacts and one parts of the region 2alpha. Here, when voltage is applied between electrodes 5, currents flow through only passages through PN junctions J1 or J2, the passages of the regions 2beta-2alpha-2epsilon or the regions 2gamma-2alpha-2delta, and the semiconductor pellet 2 indicates the same voltage characteristics as the Zener characteristics when the currents in the forward direction are within the range of 50-500mA/ mm.<2>.
JP55148389A 1980-10-24 1980-10-24 Constant-voltage diode Pending JPS5772389A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148389A JPS5772389A (en) 1980-10-24 1980-10-24 Constant-voltage diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148389A JPS5772389A (en) 1980-10-24 1980-10-24 Constant-voltage diode

Publications (1)

Publication Number Publication Date
JPS5772389A true JPS5772389A (en) 1982-05-06

Family

ID=15451673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148389A Pending JPS5772389A (en) 1980-10-24 1980-10-24 Constant-voltage diode

Country Status (1)

Country Link
JP (1) JPS5772389A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2608320A1 (en) * 1986-12-16 1988-06-17 Thomson Semiconducteurs DEVICE FOR PROTECTING AGAINST LOW CAPACITY OVERVOLTAGES
JP2013093574A (en) * 2011-10-26 2013-05-16 General Electric Co <Ge> Method and system for transient voltage suppressor
CN108598181A (en) * 2018-05-20 2018-09-28 苏州固特斯电子科技有限公司 A kind of general voltage-stabilizing diode structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2608320A1 (en) * 1986-12-16 1988-06-17 Thomson Semiconducteurs DEVICE FOR PROTECTING AGAINST LOW CAPACITY OVERVOLTAGES
EP0272184A1 (en) * 1986-12-16 1988-06-22 Sgs-Thomson Microelectronics S.A. Low-capacity overvoltage protection device
JP2013093574A (en) * 2011-10-26 2013-05-16 General Electric Co <Ge> Method and system for transient voltage suppressor
CN108598181A (en) * 2018-05-20 2018-09-28 苏州固特斯电子科技有限公司 A kind of general voltage-stabilizing diode structure
CN108598181B (en) * 2018-05-20 2021-04-02 苏州固特斯电子科技有限公司 A General Zener Diode Structure

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