JPS5694745A - Plasma treatment device - Google Patents

Plasma treatment device

Info

Publication number
JPS5694745A
JPS5694745A JP17252779A JP17252779A JPS5694745A JP S5694745 A JPS5694745 A JP S5694745A JP 17252779 A JP17252779 A JP 17252779A JP 17252779 A JP17252779 A JP 17252779A JP S5694745 A JPS5694745 A JP S5694745A
Authority
JP
Japan
Prior art keywords
electrode
treatment device
plasma treatment
etching
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17252779A
Other languages
Japanese (ja)
Inventor
Yasuaki Nakane
Yoshitsugu Nishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP17252779A priority Critical patent/JPS5694745A/en
Publication of JPS5694745A publication Critical patent/JPS5694745A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To perform an etching of high accuracy and of high efficiency avoiding an impact of particles obstructing the etching by a method wherein the 3rd electrode which can make ion transmit is installed between the 1st electrode and the 2nd electrode having a sample on it, of a plasma treatment device. CONSTITUTION:The 3rd electrode 7 which can transmit ion is installed between the 1st electrode 2 and the 2nd electrode 3 having a sample 4 on it which are installed in a container 1 of a plasma treatment device. And then, a high frequency voltage is applied across the electrodes 2, 7 and a DC voltage to control the ion accelerating energy is applied between the electrode 3 and the electrode 7 and then, needless neutral radical molecules are forcibly exhausted from an exhaust gas port 6b. With this, an etching can be performed selectively by means of a required particle, accordingly, a fine pattern can be formed with high efficiency.
JP17252779A 1979-12-28 1979-12-28 Plasma treatment device Pending JPS5694745A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17252779A JPS5694745A (en) 1979-12-28 1979-12-28 Plasma treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17252779A JPS5694745A (en) 1979-12-28 1979-12-28 Plasma treatment device

Publications (1)

Publication Number Publication Date
JPS5694745A true JPS5694745A (en) 1981-07-31

Family

ID=15943574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17252779A Pending JPS5694745A (en) 1979-12-28 1979-12-28 Plasma treatment device

Country Status (1)

Country Link
JP (1) JPS5694745A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2516308A1 (en) * 1981-11-12 1983-05-13 Varian Associates RADIO FREQUENCY ATTACK PLATE, IN PARTICULAR FOR CATHODIC SPUTTER ATTACK OF SEMICONDUCTOR WAFERS
US5417798A (en) * 1991-01-24 1995-05-23 Sumitomo Electric Industries, Ltd. Etching method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368171A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Method and apparatus for plasma treatment
JPS5450440A (en) * 1977-09-29 1979-04-20 Cho Lsi Gijutsu Kenkyu Kumiai Plasma etching device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368171A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Method and apparatus for plasma treatment
JPS5450440A (en) * 1977-09-29 1979-04-20 Cho Lsi Gijutsu Kenkyu Kumiai Plasma etching device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2516308A1 (en) * 1981-11-12 1983-05-13 Varian Associates RADIO FREQUENCY ATTACK PLATE, IN PARTICULAR FOR CATHODIC SPUTTER ATTACK OF SEMICONDUCTOR WAFERS
US5417798A (en) * 1991-01-24 1995-05-23 Sumitomo Electric Industries, Ltd. Etching method

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