JPS5696A - Drive method for charge transfer element - Google Patents
Drive method for charge transfer elementInfo
- Publication number
- JPS5696A JPS5696A JP7202579A JP7202579A JPS5696A JP S5696 A JPS5696 A JP S5696A JP 7202579 A JP7202579 A JP 7202579A JP 7202579 A JP7202579 A JP 7202579A JP S5696 A JPS5696 A JP S5696A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- crossing
- transfer efficiency
- transfer
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
Landscapes
- Networks Using Active Elements (AREA)
Abstract
PURPOSE: To remarkably increase the rate of good quality of elements and to make stable the characteristics, by driving the ion injection barrier type two phase drive implanted channel charge transfer element with the drop clock with the crossing voltage less than 70% of the maximum drive voltage.
CONSTITUTION: As shown in Figure, the crossing voltage 8 replacing the voltage relation of two phase for the drop clock drive waveform is changed by changing the duty of clock waveform, and the transfer efficiency of horizontal transfer register of ion injection barrier two phase drive implanted channel construction, in the two dimension inter-line image sensor made with the same conditions, is measured with about 7.16MHz being the transfer frequency at actual image sensing. The axis of ordinate shows the transfer efficiency obtained from the signal attenuation after 800 transfers and the axis of abscissa indicates the ratio of the crossing voltage to the maximum drive voltage. From the result of the experiment above, when the crossing voltage is used at 70% or less of the maximum drive voltage, higher transfer efficiency not causing any problem on the characteristics can be obtained against the dispersion of elements.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7202579A JPS5696A (en) | 1979-06-08 | 1979-06-08 | Drive method for charge transfer element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7202579A JPS5696A (en) | 1979-06-08 | 1979-06-08 | Drive method for charge transfer element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5696A true JPS5696A (en) | 1981-01-06 |
| JPS5712237B2 JPS5712237B2 (en) | 1982-03-09 |
Family
ID=13477450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7202579A Granted JPS5696A (en) | 1979-06-08 | 1979-06-08 | Drive method for charge transfer element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5696A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100246056B1 (en) * | 1991-01-18 | 2000-03-15 | 이데이 노부유끼 | Solid state image pick-up device |
-
1979
- 1979-06-08 JP JP7202579A patent/JPS5696A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100246056B1 (en) * | 1991-01-18 | 2000-03-15 | 이데이 노부유끼 | Solid state image pick-up device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5712237B2 (en) | 1982-03-09 |
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