JPS57102019A - Failure correction of x-ray exposure mask - Google Patents

Failure correction of x-ray exposure mask

Info

Publication number
JPS57102019A
JPS57102019A JP17918580A JP17918580A JPS57102019A JP S57102019 A JPS57102019 A JP S57102019A JP 17918580 A JP17918580 A JP 17918580A JP 17918580 A JP17918580 A JP 17918580A JP S57102019 A JPS57102019 A JP S57102019A
Authority
JP
Japan
Prior art keywords
soft
pin hole
black spot
ray
exposure mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17918580A
Other languages
Japanese (ja)
Inventor
Kazuhiro Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17918580A priority Critical patent/JPS57102019A/en
Publication of JPS57102019A publication Critical patent/JPS57102019A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To correct a fine pattern easily and accurately by a method wherein a black spot is removed by ion etching and a pin hole is corrected by ion injection. CONSTITUTION:After a soft X-ray permeable layer 2 is covered by soft X-ray absorbing metal 9 which absorbs soft X-ray, resist is removed and only a soft X-ray absorbing layer 9 is left as a pattern. At the same time a pin hole in the resist pattern leaves a black spot 7' and a black spot in the resist pattern leaves a pin hole 8', reflecting the failures in the resist pattern. Then the black spot 7' is removed by ion beam irradiation and the pin hole 7' is corrected by ion injection.
JP17918580A 1980-12-17 1980-12-17 Failure correction of x-ray exposure mask Pending JPS57102019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17918580A JPS57102019A (en) 1980-12-17 1980-12-17 Failure correction of x-ray exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17918580A JPS57102019A (en) 1980-12-17 1980-12-17 Failure correction of x-ray exposure mask

Publications (1)

Publication Number Publication Date
JPS57102019A true JPS57102019A (en) 1982-06-24

Family

ID=16061416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17918580A Pending JPS57102019A (en) 1980-12-17 1980-12-17 Failure correction of x-ray exposure mask

Country Status (1)

Country Link
JP (1) JPS57102019A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547111A1 (en) * 1983-05-31 1984-12-07 American Telephone & Telegraph METHOD FOR CORRECTING LITHOGRAPHIC MASKS
WO1986002581A1 (en) * 1984-10-26 1986-05-09 Ion Beam Systems, Inc. Focused substrate alteration
US4686162A (en) * 1983-03-01 1987-08-11 Osterreichisches Forschungszentrum Seibersdorf Ges, Mbh Optically structured filter and process for its production
US4698236A (en) * 1984-10-26 1987-10-06 Ion Beam Systems, Inc. Augmented carbonaceous substrate alteration

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686162A (en) * 1983-03-01 1987-08-11 Osterreichisches Forschungszentrum Seibersdorf Ges, Mbh Optically structured filter and process for its production
FR2547111A1 (en) * 1983-05-31 1984-12-07 American Telephone & Telegraph METHOD FOR CORRECTING LITHOGRAPHIC MASKS
JPS605524A (en) * 1983-05-31 1985-01-12 アメリカン・テレフオン・アンド・テレグラフ・カムパニ− Solid device producing method and lithographic mask
US4548883A (en) * 1983-05-31 1985-10-22 At&T Bell Laboratories Correction of lithographic masks
WO1986002581A1 (en) * 1984-10-26 1986-05-09 Ion Beam Systems, Inc. Focused substrate alteration
US4698236A (en) * 1984-10-26 1987-10-06 Ion Beam Systems, Inc. Augmented carbonaceous substrate alteration

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