JPS5745261A - Forming method for pattern - Google Patents

Forming method for pattern

Info

Publication number
JPS5745261A
JPS5745261A JP12051280A JP12051280A JPS5745261A JP S5745261 A JPS5745261 A JP S5745261A JP 12051280 A JP12051280 A JP 12051280A JP 12051280 A JP12051280 A JP 12051280A JP S5745261 A JPS5745261 A JP S5745261A
Authority
JP
Japan
Prior art keywords
irradiation
amount
bridge
slightly
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12051280A
Other languages
Japanese (ja)
Inventor
Tadao Kato
Hideo Saeki
Kazunori Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12051280A priority Critical patent/JPS5745261A/en
Publication of JPS5745261A publication Critical patent/JPS5745261A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To minimize a proximity effect of electron beams, and to obtain the minute pattern by exposing a large area section and a bridge section by the slightly small amount of irradiation and exposing both sides of the bridge through thin beams by the slightly large amount of irradiation. CONSTITUTION:The large area section and the bridge section are exposed by the amount of irradiation 42 slightly less than the proper amount of irradiation, and both sides of the bridge are doubly exposed through thin beams by the amount of irradiation 41 slightly more than the proper amount of irradiation. The resist pattern 2 with the bridge section 10 according to the design is formed because the electron beams are reflected by a substrate 3 and are more than the proper amount of irradiation.
JP12051280A 1980-08-29 1980-08-29 Forming method for pattern Pending JPS5745261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12051280A JPS5745261A (en) 1980-08-29 1980-08-29 Forming method for pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12051280A JPS5745261A (en) 1980-08-29 1980-08-29 Forming method for pattern

Publications (1)

Publication Number Publication Date
JPS5745261A true JPS5745261A (en) 1982-03-15

Family

ID=14788044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12051280A Pending JPS5745261A (en) 1980-08-29 1980-08-29 Forming method for pattern

Country Status (1)

Country Link
JP (1) JPS5745261A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4520269A (en) * 1982-11-03 1985-05-28 International Business Machines Corporation Electron beam lithography proximity correction method
US5210696A (en) * 1989-02-10 1993-05-11 Fujitsu Limited Electron beam exposure data processing method, electron beam exposure method and apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4520269A (en) * 1982-11-03 1985-05-28 International Business Machines Corporation Electron beam lithography proximity correction method
US5210696A (en) * 1989-02-10 1993-05-11 Fujitsu Limited Electron beam exposure data processing method, electron beam exposure method and apparatus

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