JPS57106047A - Manufacture of semiconductor integrated circuit device - Google Patents

Manufacture of semiconductor integrated circuit device

Info

Publication number
JPS57106047A
JPS57106047A JP55183165A JP18316580A JPS57106047A JP S57106047 A JPS57106047 A JP S57106047A JP 55183165 A JP55183165 A JP 55183165A JP 18316580 A JP18316580 A JP 18316580A JP S57106047 A JPS57106047 A JP S57106047A
Authority
JP
Japan
Prior art keywords
type
layers
layer
ions
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55183165A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6252949B2 (mo
Inventor
Yoshio Ueki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP55183165A priority Critical patent/JPS57106047A/ja
Publication of JPS57106047A publication Critical patent/JPS57106047A/ja
Publication of JPS6252949B2 publication Critical patent/JPS6252949B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP55183165A 1980-12-23 1980-12-23 Manufacture of semiconductor integrated circuit device Granted JPS57106047A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55183165A JPS57106047A (en) 1980-12-23 1980-12-23 Manufacture of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55183165A JPS57106047A (en) 1980-12-23 1980-12-23 Manufacture of semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57106047A true JPS57106047A (en) 1982-07-01
JPS6252949B2 JPS6252949B2 (mo) 1987-11-07

Family

ID=16130919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55183165A Granted JPS57106047A (en) 1980-12-23 1980-12-23 Manufacture of semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57106047A (mo)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2575330A1 (fr) * 1984-12-20 1986-06-27 Sgs Microelettronica Spa Procede pour la formation d'une couche enterree et d'une region de collecteur dans un dispositif monolithique a semi-conducteur
JPS63185061A (ja) * 1987-01-28 1988-07-30 Toshiba Corp 半導体装置の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0444163U (mo) * 1990-08-20 1992-04-15

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5150681A (en) * 1974-10-30 1976-05-04 Hitachi Ltd Handotaisochino seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5150681A (en) * 1974-10-30 1976-05-04 Hitachi Ltd Handotaisochino seizohoho

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2575330A1 (fr) * 1984-12-20 1986-06-27 Sgs Microelettronica Spa Procede pour la formation d'une couche enterree et d'une region de collecteur dans un dispositif monolithique a semi-conducteur
JPS61181161A (ja) * 1984-12-20 1986-08-13 エス・ジ−・エス・マイクロエレツトロニカ・エス・ピ−・エ− 半導体装置の製造方法
JPS63185061A (ja) * 1987-01-28 1988-07-30 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6252949B2 (mo) 1987-11-07

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