JPS57112045A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57112045A
JPS57112045A JP55187234A JP18723480A JPS57112045A JP S57112045 A JPS57112045 A JP S57112045A JP 55187234 A JP55187234 A JP 55187234A JP 18723480 A JP18723480 A JP 18723480A JP S57112045 A JPS57112045 A JP S57112045A
Authority
JP
Japan
Prior art keywords
region
mgo
layer
fundation
foundation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55187234A
Other languages
Japanese (ja)
Inventor
Yoshihiro Arimoto
Masaru Ihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187234A priority Critical patent/JPS57112045A/en
Publication of JPS57112045A publication Critical patent/JPS57112045A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To obtain an element with high deelectric strength by a method wherein a plurality of concave grooves are formed on a surface of a semiconductor foundation, and over the whole surface containing them, an MgO.Al2O3 layer, and furthermore a single crystal semiconductor layer are laminated, epitaxially grown and polished on the back plane, and a foundation region which is surrounded by the MgO. Al2O3 layer in the convex groove is obtained, and an element is formed here. CONSTITUTION:A plurality of V shaped grooves 2 are bored on the surface of an Si fundation 1, and on the whole surface containing them an MgO.Al2O3 layer 13 is grown by epitaxial growth, and furthermore over it a single crystal Si layer 14 is laminated by epitaxial growth. Next by means of a chemical or mechanical precise grinding method, grinding on a back plane of the fundation 1 is performed until the region of groove 2 is exposed, and a plurality of foundation 1 regions which are completely isolated by insulation and of which the circumference is surrounded by the MgO.Al2O3 layer 13 are obtained. Subsequently after a base region 15B in this region, an emitter region 15E placed in it, and furthermore a collector contact region 15C in the fundation region are provided, a bipolar IC15 is completed. By this method curvature can not occur and high dielectric strength is obtained.
JP55187234A 1980-12-29 1980-12-29 Manufacture of semiconductor device Pending JPS57112045A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55187234A JPS57112045A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187234A JPS57112045A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57112045A true JPS57112045A (en) 1982-07-12

Family

ID=16202398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187234A Pending JPS57112045A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57112045A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923621A (en) * 1972-04-28 1974-03-02
JPS52119084A (en) * 1976-03-31 1977-10-06 Hitachi Ltd Manufacture of semiconductor integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923621A (en) * 1972-04-28 1974-03-02
JPS52119084A (en) * 1976-03-31 1977-10-06 Hitachi Ltd Manufacture of semiconductor integrated circuit

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