JPS57113231A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57113231A
JPS57113231A JP55188134A JP18813480A JPS57113231A JP S57113231 A JPS57113231 A JP S57113231A JP 55188134 A JP55188134 A JP 55188134A JP 18813480 A JP18813480 A JP 18813480A JP S57113231 A JPS57113231 A JP S57113231A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
semiconductor
silicon oxidized
reliability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55188134A
Other languages
Japanese (ja)
Inventor
Shoichi Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55188134A priority Critical patent/JPS57113231A/en
Publication of JPS57113231A publication Critical patent/JPS57113231A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To remarkably improve the reliability of a semiconductor device by growing as an overcoating film a silicon oxidized film of 1.5-3mum thick by a reduced pressure CVD method on the surface of semiconductor. CONSTITUTION:A silicon oxidized film (including various glass films mixed with phosphorus, boron, lead, etc. in a silicon oxidized film and a film of multilayer of various glass films) is grown in a thickness of 1.5-3mum by a reduced pressure gas phase growing method on the surface of a semiconductor to form a protective film. In this manner, the reliability of the semiconductor device can be improved, thereby reducing the manufacturing cost.
JP55188134A 1980-12-29 1980-12-29 Semiconductor device Pending JPS57113231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55188134A JPS57113231A (en) 1980-12-29 1980-12-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55188134A JPS57113231A (en) 1980-12-29 1980-12-29 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP101589A Division JPH02168622A (en) 1989-01-06 1989-01-06 semiconductor equipment

Publications (1)

Publication Number Publication Date
JPS57113231A true JPS57113231A (en) 1982-07-14

Family

ID=16218323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55188134A Pending JPS57113231A (en) 1980-12-29 1980-12-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57113231A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2024029390A1 (en) * 2022-08-01 2024-02-08

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55145338A (en) * 1979-05-01 1980-11-12 Toshiba Corp Pressure reduction chemical vapour deposition device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55145338A (en) * 1979-05-01 1980-11-12 Toshiba Corp Pressure reduction chemical vapour deposition device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2024029390A1 (en) * 2022-08-01 2024-02-08
WO2024029390A1 (en) * 2022-08-01 2024-02-08 三井化学株式会社 Method for producing substrate laminate and semiconductor device

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