JPS5568679A - Semiconductor pressure sensor and fabrication of the same - Google Patents
Semiconductor pressure sensor and fabrication of the sameInfo
- Publication number
- JPS5568679A JPS5568679A JP14102578A JP14102578A JPS5568679A JP S5568679 A JPS5568679 A JP S5568679A JP 14102578 A JP14102578 A JP 14102578A JP 14102578 A JP14102578 A JP 14102578A JP S5568679 A JPS5568679 A JP S5568679A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- crystalline orientation
- exposed
- pressure sensor
- diaphragm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 1
- 239000012670 alkaline solution Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Pressure Sensors (AREA)
Abstract
PURPOSE: To obtain a highly accurate semiconductor pressure sensor inexpensively by adhering a first semiconductor substrate exposed at a plane (110) to a second semiconductor substrate for supporting it and exposed at a plane (100), forming a gauge resistance layer in the first substrate and machining the second substrate to form a diaphragm thereat.
CONSTITUTION: The surface of a supporting second silicon substrate 22 is mirror finished in its crystalline orientation (100), and adhered with a first silicon substrate 21 similarly mirror finished in its crystalline orientation (110) through a boron silicate film 23 thereto. Then, the exposed surface of the substrate 21 is mirror polished to form predetermined thickness of a diaphragm and to coat it with SiO2 film 24. Then, boron is diffused by a selective diffusion process to thereby form two types of gauge resistance layers 25 in the substrate 21 in such a manner that the one is formed in its diametrical direction and the other in its tangential direction as bridge construction having less nonlinear error. It is then etched by alkaline solution utilizing the crystalline orientation (100) of the second substrate 22 to thereby retain the substrate 22 only at its periphery.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14102578A JPS5568679A (en) | 1978-11-17 | 1978-11-17 | Semiconductor pressure sensor and fabrication of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14102578A JPS5568679A (en) | 1978-11-17 | 1978-11-17 | Semiconductor pressure sensor and fabrication of the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5568679A true JPS5568679A (en) | 1980-05-23 |
Family
ID=15282452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14102578A Pending JPS5568679A (en) | 1978-11-17 | 1978-11-17 | Semiconductor pressure sensor and fabrication of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5568679A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6199430B1 (en) | 1997-06-17 | 2001-03-13 | Denso Corporation | Acceleration sensor with ring-shaped movable electrode |
| US6388300B1 (en) | 1999-01-25 | 2002-05-14 | Denso Corporation | Semiconductor physical quantity sensor and method of manufacturing the same |
| US6653702B2 (en) | 2000-06-13 | 2003-11-25 | Denso Corporation | Semiconductor pressure sensor having strain gauge and circuit portion on semiconductor substrate |
-
1978
- 1978-11-17 JP JP14102578A patent/JPS5568679A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6199430B1 (en) | 1997-06-17 | 2001-03-13 | Denso Corporation | Acceleration sensor with ring-shaped movable electrode |
| US6388300B1 (en) | 1999-01-25 | 2002-05-14 | Denso Corporation | Semiconductor physical quantity sensor and method of manufacturing the same |
| US6653702B2 (en) | 2000-06-13 | 2003-11-25 | Denso Corporation | Semiconductor pressure sensor having strain gauge and circuit portion on semiconductor substrate |
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