JPS5711896A - Production of single crystal - Google Patents

Production of single crystal

Info

Publication number
JPS5711896A
JPS5711896A JP8489080A JP8489080A JPS5711896A JP S5711896 A JPS5711896 A JP S5711896A JP 8489080 A JP8489080 A JP 8489080A JP 8489080 A JP8489080 A JP 8489080A JP S5711896 A JPS5711896 A JP S5711896A
Authority
JP
Japan
Prior art keywords
single crystal
crystal
grown
single crystals
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8489080A
Other languages
Japanese (ja)
Inventor
Sadao Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8489080A priority Critical patent/JPS5711896A/en
Publication of JPS5711896A publication Critical patent/JPS5711896A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: Grown single crystal is gradually cooled without being taken out of the crystal-drawing up device to inhibit the development of thermal distortion during the cooling process, thus producing single crystals of high quality and high processability.
CONSTITUTION: When a single crystal is grown by drawing up the seed crystal 5, the heater is pulled up by a certain distance from the crucible 1, the grown single crystal is separated from the surface of melted liquid 6 and placed in the zone surrounded with heat reflector 3. As kept in this state, the work coil 2 is gradually raised and simultaneously the heating power is reduced according to the prescribed program. The gradual cooling produces desirable single crystals without deformation and microcracks with high reproducibility in high yield.
COPYRIGHT: (C)1982,JPO&Japio
JP8489080A 1980-06-23 1980-06-23 Production of single crystal Pending JPS5711896A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8489080A JPS5711896A (en) 1980-06-23 1980-06-23 Production of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8489080A JPS5711896A (en) 1980-06-23 1980-06-23 Production of single crystal

Publications (1)

Publication Number Publication Date
JPS5711896A true JPS5711896A (en) 1982-01-21

Family

ID=13843342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8489080A Pending JPS5711896A (en) 1980-06-23 1980-06-23 Production of single crystal

Country Status (1)

Country Link
JP (1) JPS5711896A (en)

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