JPS57140318A - Manufacture of substrate having stuck electrically conductive transparent film - Google Patents
Manufacture of substrate having stuck electrically conductive transparent filmInfo
- Publication number
- JPS57140318A JPS57140318A JP2564781A JP2564781A JPS57140318A JP S57140318 A JPS57140318 A JP S57140318A JP 2564781 A JP2564781 A JP 2564781A JP 2564781 A JP2564781 A JP 2564781A JP S57140318 A JPS57140318 A JP S57140318A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- in2o3
- substrate
- sno
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- RJGHQTVXGKYATR-UHFFFAOYSA-L dibutyl(dichloro)stannane Chemical compound CCCC[Sn](Cl)(Cl)CCCC RJGHQTVXGKYATR-UHFFFAOYSA-L 0.000 abstract 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000007858 starting material Substances 0.000 abstract 1
- YJBKVPRVZAQTPY-UHFFFAOYSA-J tetrachlorostannane;dihydrate Chemical compound O.O.Cl[Sn](Cl)(Cl)Cl YJBKVPRVZAQTPY-UHFFFAOYSA-J 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
Landscapes
- Chemical & Material Sciences (AREA)
- Liquid Crystal (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
- Inorganic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
PURPOSE:To form a vacuum-deposited film with superior electric conductivity, heat stabilty and transparency by adding a specified percentage of Cl2 to the total amount of In2O3 and SnO when a mixture of them is vacuum-deposited on a glass substrate. CONSTITUTION:In2O3 or SnO-contg. In2O3 is vacuum-deposited on a glass substarate to form an electrode for a liq. crystal display element. At this time, to the starting material for vacuum deposition is added a chloride such as indium chloride, tin chloride dihydrate or dibutyltin dichloride by 0.02-0.5wt% as chlorine to the total amount of the In2O3 and SnO. Thus, the vacuum-deposited film has superior transparency without deteriorating the electric conductivity and heat stability, and an electrode substrate having the film for the liq. crystal display element can be manufactured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2564781A JPS57140318A (en) | 1981-02-24 | 1981-02-24 | Manufacture of substrate having stuck electrically conductive transparent film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2564781A JPS57140318A (en) | 1981-02-24 | 1981-02-24 | Manufacture of substrate having stuck electrically conductive transparent film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57140318A true JPS57140318A (en) | 1982-08-30 |
Family
ID=12171614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2564781A Pending JPS57140318A (en) | 1981-02-24 | 1981-02-24 | Manufacture of substrate having stuck electrically conductive transparent film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57140318A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0247256A (en) * | 1988-06-22 | 1990-02-16 | Boc Group Inc:The | Formation of an oxide coating by reactive-sputtering |
| US4975388A (en) * | 1988-06-03 | 1990-12-04 | U.S. Philips Corporation | Method of forming epitaxial layers |
| JPH07274646A (en) * | 1995-02-07 | 1995-10-24 | Iseki & Co Ltd | Riding type rice transplanter with fertilizer application |
-
1981
- 1981-02-24 JP JP2564781A patent/JPS57140318A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4975388A (en) * | 1988-06-03 | 1990-12-04 | U.S. Philips Corporation | Method of forming epitaxial layers |
| JPH0247256A (en) * | 1988-06-22 | 1990-02-16 | Boc Group Inc:The | Formation of an oxide coating by reactive-sputtering |
| JPH07274646A (en) * | 1995-02-07 | 1995-10-24 | Iseki & Co Ltd | Riding type rice transplanter with fertilizer application |
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