JPS57174454A - Production of photoconductive member - Google Patents

Production of photoconductive member

Info

Publication number
JPS57174454A
JPS57174454A JP56060157A JP6015781A JPS57174454A JP S57174454 A JPS57174454 A JP S57174454A JP 56060157 A JP56060157 A JP 56060157A JP 6015781 A JP6015781 A JP 6015781A JP S57174454 A JPS57174454 A JP S57174454A
Authority
JP
Japan
Prior art keywords
compds
formula
carbon atoms
raw material
kinds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56060157A
Other languages
English (en)
Japanese (ja)
Other versions
JPS635469B2 (2
Inventor
Isamu Shimizu
Kyosuke Ogawa
Junichiro Kanbe
Hidekazu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56060157A priority Critical patent/JPS57174454A/ja
Priority to US06/354,898 priority patent/US4468443A/en
Priority to DE19823209055 priority patent/DE3209055A1/de
Publication of JPS57174454A publication Critical patent/JPS57174454A/ja
Publication of JPS635469B2 publication Critical patent/JPS635469B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP56060157A 1981-03-12 1981-04-21 Production of photoconductive member Granted JPS57174454A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56060157A JPS57174454A (en) 1981-04-21 1981-04-21 Production of photoconductive member
US06/354,898 US4468443A (en) 1981-03-12 1982-03-04 Process for producing photoconductive member from gaseous silicon compounds
DE19823209055 DE3209055A1 (de) 1981-03-12 1982-03-12 Verfahren zur herstellung eines fotoleitfaehigen elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56060157A JPS57174454A (en) 1981-04-21 1981-04-21 Production of photoconductive member

Publications (2)

Publication Number Publication Date
JPS57174454A true JPS57174454A (en) 1982-10-27
JPS635469B2 JPS635469B2 (2) 1988-02-03

Family

ID=13134028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56060157A Granted JPS57174454A (en) 1981-03-12 1981-04-21 Production of photoconductive member

Country Status (1)

Country Link
JP (1) JPS57174454A (2)

Also Published As

Publication number Publication date
JPS635469B2 (2) 1988-02-03

Similar Documents

Publication Publication Date Title
ATE27186T1 (de) Verfahren zur herstellung von amorphen halbleitenden legierungen und von anordnungen mittels mikrowellenenergie.
MY109338A (en) A high density artificial stone and a method for producing therefor
JPS57167631A (en) Plasma vapor-phase growing method
CA2020904A1 (en) Carbide products and method and apparatus for their production
EP1178132A3 (en) SiC material and method for manufacturing same
JPS5610921A (en) Material for equipment for manufacturing semiconductor and its treating furnace
JPS64722A (en) Manufacture of semiconductor base material
EP0961299A4 (en) PRODUCTION OF POSITIVE TEMPERATURE COEFFICIENT SEMICONDUCTOR CERAMIC
JPS56155100A (en) Production of single crystal of ferrite
JPS57156318A (en) Production of trichlorosilane
JPS5529155A (en) Semiconductor device
JPS53133600A (en) Production of silicon nitride
JPS57174449A (en) Production of photoconductive member
KR890008354A (ko) 고순도 도우핑 합금
JPS57174450A (en) Production of photoconductive member
JPS57174452A (en) Production of photoconductive member
JPS57174451A (en) Production of photoconductive member
JPS57152464A (en) Manufacture of photoconductive member
JPS57174448A (en) Production of photoconductive member
JPS57152463A (en) Manufacture of photoconductive member
US3463666A (en) Monocrystalline beta silicon carbide on sapphire
JPS57152462A (en) Manufacture of photoconductive member
KR910018305A (ko) 폴리실리콘 및 이의 제조방법
EP0409983A4 (en) Process for producing molding composed of silicon carbide and carbon
JPS5638054A (en) Composite electrophotographic receptor