JPS57180120A - Monitoring device for beam annealing - Google Patents

Monitoring device for beam annealing

Info

Publication number
JPS57180120A
JPS57180120A JP56065783A JP6578381A JPS57180120A JP S57180120 A JPS57180120 A JP S57180120A JP 56065783 A JP56065783 A JP 56065783A JP 6578381 A JP6578381 A JP 6578381A JP S57180120 A JPS57180120 A JP S57180120A
Authority
JP
Japan
Prior art keywords
acoustic wave
wafer
laser beam
transducer
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56065783A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0347730B2 (2
Inventor
Koichiro Ootori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP56065783A priority Critical patent/JPS57180120A/ja
Publication of JPS57180120A publication Critical patent/JPS57180120A/ja
Publication of JPH0347730B2 publication Critical patent/JPH0347730B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP56065783A 1981-04-30 1981-04-30 Monitoring device for beam annealing Granted JPS57180120A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56065783A JPS57180120A (en) 1981-04-30 1981-04-30 Monitoring device for beam annealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56065783A JPS57180120A (en) 1981-04-30 1981-04-30 Monitoring device for beam annealing

Publications (2)

Publication Number Publication Date
JPS57180120A true JPS57180120A (en) 1982-11-06
JPH0347730B2 JPH0347730B2 (2) 1991-07-22

Family

ID=13296973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56065783A Granted JPS57180120A (en) 1981-04-30 1981-04-30 Monitoring device for beam annealing

Country Status (1)

Country Link
JP (1) JPS57180120A (2)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6210996B1 (en) 1995-01-13 2001-04-03 Semiconductor Energy Laboratory Co., Ltd. Laser illumination system
JP2009158822A (ja) * 2007-12-27 2009-07-16 Semiconductor Energy Lab Co Ltd 半導体層の評価方法及び半導体基板の作製方法
US7714251B2 (en) 2005-11-23 2010-05-11 Semiconductor Energy Laboratory Co., Ltd Laser irradiation apparatus
JP2016149573A (ja) * 2007-11-08 2016-08-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ パルス列アニーリング方法および装置
US11040415B2 (en) 2007-11-08 2021-06-22 Applied Materials, Inc. Pulse train annealing method and apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LITTERS=1980 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6210996B1 (en) 1995-01-13 2001-04-03 Semiconductor Energy Laboratory Co., Ltd. Laser illumination system
US6468842B2 (en) 1995-01-13 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Laser illumination system
US6706570B2 (en) 1995-01-13 2004-03-16 Semiconductor Energy Laboratory Co., Ltd., Laser illumination system
US7528079B2 (en) 1995-01-13 2009-05-05 Semiconductor Energy Laboratory Co., Ltd. Method of changing an energy attenuation factor of a linear light in order to crystallize a semiconductor film
US7714251B2 (en) 2005-11-23 2010-05-11 Semiconductor Energy Laboratory Co., Ltd Laser irradiation apparatus
JP2016149573A (ja) * 2007-11-08 2016-08-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ パルス列アニーリング方法および装置
US11040415B2 (en) 2007-11-08 2021-06-22 Applied Materials, Inc. Pulse train annealing method and apparatus
US12186832B2 (en) 2007-11-08 2025-01-07 Applied Materials, Inc. Pulse train annealing method and apparatus
JP2009158822A (ja) * 2007-12-27 2009-07-16 Semiconductor Energy Lab Co Ltd 半導体層の評価方法及び半導体基板の作製方法

Also Published As

Publication number Publication date
JPH0347730B2 (2) 1991-07-22

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