JPS57192075A - Photo trigger thyristor - Google Patents

Photo trigger thyristor

Info

Publication number
JPS57192075A
JPS57192075A JP56076295A JP7629581A JPS57192075A JP S57192075 A JPS57192075 A JP S57192075A JP 56076295 A JP56076295 A JP 56076295A JP 7629581 A JP7629581 A JP 7629581A JP S57192075 A JPS57192075 A JP S57192075A
Authority
JP
Japan
Prior art keywords
order
auxiliary
layer
thyristor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56076295A
Other languages
Japanese (ja)
Inventor
Yasuyuki Sato
Osamu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP56076295A priority Critical patent/JPS57192075A/en
Publication of JPS57192075A publication Critical patent/JPS57192075A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Light Receiving Elements (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To enhance withstand voltage and current carrying capacity at a photo trigger thyristor having double amplification type gate structure by a method wherein the distance between the junction formed between the second layer and the third layer and the junction formed between the third layer and the fourth layer is enlarged in order according to the order of the first, the second auxiliary thyristors, and the main thyristor. CONSTITUTION:The region for the first auxiliary thyristorI, the region for the second auxiliary thyristor II, and the region for the main thyristor III are provided in a silicon substrate 1, and the photo detecting part 2 of the first auxiliary thyristorIis made to have concave structure. Depthes of NE layers 31, 32, 33 of the respective thyristors are made to become shallower in order. Accordingly thicknesses of PB layers under the respective NE layers are enlarged according to the order of the first, the second auxiliary thyristors, and the main thyristor, and sensitivity of triggering is reduced according to the order thereof.
JP56076295A 1981-05-20 1981-05-20 Photo trigger thyristor Pending JPS57192075A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076295A JPS57192075A (en) 1981-05-20 1981-05-20 Photo trigger thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076295A JPS57192075A (en) 1981-05-20 1981-05-20 Photo trigger thyristor

Publications (1)

Publication Number Publication Date
JPS57192075A true JPS57192075A (en) 1982-11-26

Family

ID=13601354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076295A Pending JPS57192075A (en) 1981-05-20 1981-05-20 Photo trigger thyristor

Country Status (1)

Country Link
JP (1) JPS57192075A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4721095U (en) * 1971-03-20 1972-11-09
JPS5229189A (en) * 1975-08-29 1977-03-04 Siemens Ag Optical controlled thyristor
JPS5267280A (en) * 1975-11-03 1977-06-03 Gen Electric Radiation sensitive semiconductor device
JPS5291384A (en) * 1976-01-22 1977-08-01 Westinghouse Electric Corp Semiconductor switching element
JPS5460881A (en) * 1977-10-24 1979-05-16 Mitsubishi Electric Corp Optical action type semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4721095U (en) * 1971-03-20 1972-11-09
JPS5229189A (en) * 1975-08-29 1977-03-04 Siemens Ag Optical controlled thyristor
JPS5267280A (en) * 1975-11-03 1977-06-03 Gen Electric Radiation sensitive semiconductor device
JPS5291384A (en) * 1976-01-22 1977-08-01 Westinghouse Electric Corp Semiconductor switching element
JPS5460881A (en) * 1977-10-24 1979-05-16 Mitsubishi Electric Corp Optical action type semiconductor device

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