JPS57192078A - Manufacture of mos semiconductor device - Google Patents

Manufacture of mos semiconductor device

Info

Publication number
JPS57192078A
JPS57192078A JP56076556A JP7655681A JPS57192078A JP S57192078 A JPS57192078 A JP S57192078A JP 56076556 A JP56076556 A JP 56076556A JP 7655681 A JP7655681 A JP 7655681A JP S57192078 A JPS57192078 A JP S57192078A
Authority
JP
Japan
Prior art keywords
type
phosphorus
oxide film
photo etching
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56076556A
Other languages
Japanese (ja)
Inventor
Kazumichi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56076556A priority Critical patent/JPS57192078A/en
Publication of JPS57192078A publication Critical patent/JPS57192078A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Abstract

PURPOSE:To reduce output capacity and to enhance high frequency capaciteristic of an MOS semiconductor device by a method wherein after openings for source and drain are formed, impurities of phosphorus are made to dope in a P type substrate by ion implantation, an opening for gate is formed immediately, and activation of phosphorus and formation of a gate oxide film are performed. CONSTITUTION:An N type selective diffusion layer 11 and protective diodes for a P<+> type selective diffusion layer 12 are formed at a part of the main face of a P type Si substrate 10, impurities are doped from the openings 10a, 10b, photo etching of an oxide film at the gate part 10c is performed immediately, activation of impurity ions of phosphorus is performed by thermal oxidation to form N<+> type layers 14, and at the same time, the thin gate oxide film 15 is formed. Then an Mo film 16 is formed, photo etching is performed, N type layers (source and drain) 17 are formed by phosphorus ions implantation, an SiO2 film 18 is formed by the CVD method, and after photo etching is performed, Al electrodes 19 are formed by evaporation.
JP56076556A 1981-05-22 1981-05-22 Manufacture of mos semiconductor device Pending JPS57192078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076556A JPS57192078A (en) 1981-05-22 1981-05-22 Manufacture of mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076556A JPS57192078A (en) 1981-05-22 1981-05-22 Manufacture of mos semiconductor device

Publications (1)

Publication Number Publication Date
JPS57192078A true JPS57192078A (en) 1982-11-26

Family

ID=13608523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076556A Pending JPS57192078A (en) 1981-05-22 1981-05-22 Manufacture of mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS57192078A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028556A (en) * 1990-02-16 1991-07-02 Hughes Aircraft Company Process for fabricating radiation hard high voltage devices
JPH0422136A (en) * 1990-05-17 1992-01-27 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028556A (en) * 1990-02-16 1991-07-02 Hughes Aircraft Company Process for fabricating radiation hard high voltage devices
JPH0422136A (en) * 1990-05-17 1992-01-27 Fujitsu Ltd Manufacture of semiconductor device

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