JPS57192096A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS57192096A
JPS57192096A JP56077170A JP7717081A JPS57192096A JP S57192096 A JPS57192096 A JP S57192096A JP 56077170 A JP56077170 A JP 56077170A JP 7717081 A JP7717081 A JP 7717081A JP S57192096 A JPS57192096 A JP S57192096A
Authority
JP
Japan
Prior art keywords
light emitting
center
stem
lens
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56077170A
Other languages
Japanese (ja)
Inventor
Hajime Imai
Masatoshi Saruwatari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
NTT Inc
Original Assignee
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Nippon Telegraph and Telephone Corp filed Critical Fujitsu Ltd
Priority to JP56077170A priority Critical patent/JPS57192096A/en
Publication of JPS57192096A publication Critical patent/JPS57192096A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/0222—Gas-filled housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To contrive to enhance precision of positioning of a semiconductor light emitting device by a method wherein a double eccentric tube engaged with a stem as to cover the light emitting device, a spherical lens being equipped to the tube thereof and coinciding the center thereof with the center of the light emitting part of the device mentioned above, and a cover body to seal the respective elements air-tightly, are provided. CONSTITUTION:A semiconductor laser diode 12 is bonded to the stem 11. The spherical lens 15 is pressed to be fixed in a hole formed at the eccentric position of the sealing part 14a at the inside sliding cylinder 14. The outside sliding cylinder 13 and the inside sliding cylinder 14 are made to slide rotation freely to be engaged constituting the double eccentric tube A. The eccentric tube A thereof is engaged with the stem 11 being made to slide rotation freely. Then the cylinders 13, 14 are rotated properly, and are regulated as to make the center of the lens 15 and the center of the light emitting part of the diode 12 to be coincided. Then the stem 11 and the cylinder 13 are fixed using an adhesive 19. Then the cover body 16 equipped with a window plate 17 is fixed to the stem 11 to be completed. As a result, coincidence between the center of the lens 15 and the center of the light emitting device can be regulated easily, and light can be taken out outside effectively through the lens.
JP56077170A 1981-05-21 1981-05-21 Semiconductor light emitting device Pending JPS57192096A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56077170A JPS57192096A (en) 1981-05-21 1981-05-21 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56077170A JPS57192096A (en) 1981-05-21 1981-05-21 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS57192096A true JPS57192096A (en) 1982-11-26

Family

ID=13626310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56077170A Pending JPS57192096A (en) 1981-05-21 1981-05-21 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS57192096A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873170A (en) * 1981-10-27 1983-05-02 Fujitsu Ltd Light emitting semiconductor device
JPS6413165U (en) * 1987-07-13 1989-01-24
EP1926154A3 (en) * 2006-11-21 2011-03-30 Nichia Corporation Semiconductor light emitting device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873170A (en) * 1981-10-27 1983-05-02 Fujitsu Ltd Light emitting semiconductor device
JPS6413165U (en) * 1987-07-13 1989-01-24
EP1926154A3 (en) * 2006-11-21 2011-03-30 Nichia Corporation Semiconductor light emitting device
US8106414B2 (en) 2006-11-21 2012-01-31 Nichia Corporation Semiconductor light emitting device

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