JPS57196626A - Electronic circuit - Google Patents

Electronic circuit

Info

Publication number
JPS57196626A
JPS57196626A JP56081407A JP8140781A JPS57196626A JP S57196626 A JPS57196626 A JP S57196626A JP 56081407 A JP56081407 A JP 56081407A JP 8140781 A JP8140781 A JP 8140781A JP S57196626 A JPS57196626 A JP S57196626A
Authority
JP
Japan
Prior art keywords
gate
turns
mosfet21
thyristor
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56081407A
Other languages
Japanese (ja)
Inventor
Hisashi Haneda
Shigeru Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56081407A priority Critical patent/JPS57196626A/en
Publication of JPS57196626A publication Critical patent/JPS57196626A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To reduce the loss in a gate input power and to increase the switching speed, by connecting a complementary MOSFET between the anode and gate and between the gate and cathode of a thyristor. CONSTITUTION:In a thyristor of 4-layer construction bonding P type semiconductors 1 and 3 and N type semiconductors 2 and 4 alternately, a P channel MOSFET21 is provided between the anode and gate and an N channel MOSFET 22 is located between the gate and cathode and an input voltage is applied to the gate of both the MOSFETs in common. When a voltage with which the MOSFET21 turns on and the MOSFET22 turns off as an on-voltage is applied, a gate current flows through the MOSFET21 and the thyristor turns on. When the MOSFET21 turns off and the MOSFET22 turns on inversely, the gate and cathode are shortened to turn off the thyristor.
JP56081407A 1981-05-28 1981-05-28 Electronic circuit Pending JPS57196626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56081407A JPS57196626A (en) 1981-05-28 1981-05-28 Electronic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56081407A JPS57196626A (en) 1981-05-28 1981-05-28 Electronic circuit

Publications (1)

Publication Number Publication Date
JPS57196626A true JPS57196626A (en) 1982-12-02

Family

ID=13745471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56081407A Pending JPS57196626A (en) 1981-05-28 1981-05-28 Electronic circuit

Country Status (1)

Country Link
JP (1) JPS57196626A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS617665A (en) * 1984-06-22 1986-01-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS6327118A (en) * 1986-07-21 1988-02-04 Hitachi Ltd Semiconductor switch circuit
US4794441A (en) * 1984-06-22 1988-12-27 Hitachi Ltd. Semiconductor switch circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826358A (en) * 1971-08-10 1973-04-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826358A (en) * 1971-08-10 1973-04-06

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS617665A (en) * 1984-06-22 1986-01-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
US4794441A (en) * 1984-06-22 1988-12-27 Hitachi Ltd. Semiconductor switch circuit
EP0367301A2 (en) 1984-06-22 1990-05-09 Hitachi, Ltd. Semiconductor switch circuit
JPS6327118A (en) * 1986-07-21 1988-02-04 Hitachi Ltd Semiconductor switch circuit

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