JPS57197864A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57197864A
JPS57197864A JP57065340A JP6534082A JPS57197864A JP S57197864 A JPS57197864 A JP S57197864A JP 57065340 A JP57065340 A JP 57065340A JP 6534082 A JP6534082 A JP 6534082A JP S57197864 A JPS57197864 A JP S57197864A
Authority
JP
Japan
Prior art keywords
base
emitter
shaped
region
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57065340A
Other languages
Japanese (ja)
Inventor
Masayoshi Yoshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57065340A priority Critical patent/JPS57197864A/en
Publication of JPS57197864A publication Critical patent/JPS57197864A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To increase the current density of an emitter by forming a reticulate emitter region surrounding a base region in a main surface and an emitter electrode and shaping a wiring layer connecting the base region in common through an insulating film. CONSTITUTION:A P type semiconductor layer 2 as the base layer is formed onto an N type semiconductor substrate 1 as a collector, and an N type diffusion layer 3 is shaped reticulately to the surface of the P type semiconductor layer 2 and used as the emitter region. An oxide film 4 is molded to the surface to protect the surface of a junction. The emitter electrode 5 is formed reticulately onto the emitter region 3. An oxide film 7 is shaped to the surface through a CVD method, etc. Openings are formed to the upper section of base electrodes 6, and a beltlike base electrode 8 connecting the base electrodes 6 is shaped.
JP57065340A 1982-04-21 1982-04-21 Semiconductor device Pending JPS57197864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57065340A JPS57197864A (en) 1982-04-21 1982-04-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57065340A JPS57197864A (en) 1982-04-21 1982-04-21 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP49110530A Division JPS5138879A (en) 1974-09-27 1974-09-27

Publications (1)

Publication Number Publication Date
JPS57197864A true JPS57197864A (en) 1982-12-04

Family

ID=13284111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57065340A Pending JPS57197864A (en) 1982-04-21 1982-04-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57197864A (en)

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