JPS57200285A - Device for growing crystal - Google Patents

Device for growing crystal

Info

Publication number
JPS57200285A
JPS57200285A JP8523881A JP8523881A JPS57200285A JP S57200285 A JPS57200285 A JP S57200285A JP 8523881 A JP8523881 A JP 8523881A JP 8523881 A JP8523881 A JP 8523881A JP S57200285 A JPS57200285 A JP S57200285A
Authority
JP
Japan
Prior art keywords
raw material
heating
single crystal
crystal
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8523881A
Other languages
Japanese (ja)
Inventor
Koki Nagahama
Kazuo Nishitani
Jun Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8523881A priority Critical patent/JPS57200285A/en
Publication of JPS57200285A publication Critical patent/JPS57200285A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: In growing a crystal such as semiconductors, etc. by Bridgman method, to make the temperature distribution of the surface of a molten raw material flat and to enable the stable preparation of large-sized crystal, by melting the raw material by heating simultaneously through a resistance heating mechanism and a high-frequency heating mechanism.
CONSTITUTION: The raw material 3 for single crystal such as metal or semiconductor is sealed in the quartz glass 2, which is suspended by the hanging line 4, dropped in the furnace, the raw material is melted, the inner melted raw material is solidified from the bottom successively by the fall of the sealed pipe 3, so that a single crystal is grown. In the operation, simultaneous heating is carried out by a furnace heating method wherein the resistance type furnace 5 is equipped with the high-frequency heating coil 6. The temperature distribution curve A of the solid-liquid interface of the raw material in the quartz tube 2 is made flat, thermal strain will not occur, and the large-sized single crystal is prepared stably.
COPYRIGHT: (C)1982,JPO&Japio
JP8523881A 1981-06-01 1981-06-01 Device for growing crystal Pending JPS57200285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8523881A JPS57200285A (en) 1981-06-01 1981-06-01 Device for growing crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8523881A JPS57200285A (en) 1981-06-01 1981-06-01 Device for growing crystal

Publications (1)

Publication Number Publication Date
JPS57200285A true JPS57200285A (en) 1982-12-08

Family

ID=13852975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8523881A Pending JPS57200285A (en) 1981-06-01 1981-06-01 Device for growing crystal

Country Status (1)

Country Link
JP (1) JPS57200285A (en)

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