JPS5721865A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5721865A
JPS5721865A JP9604880A JP9604880A JPS5721865A JP S5721865 A JPS5721865 A JP S5721865A JP 9604880 A JP9604880 A JP 9604880A JP 9604880 A JP9604880 A JP 9604880A JP S5721865 A JPS5721865 A JP S5721865A
Authority
JP
Japan
Prior art keywords
type
injected
insulating film
polycrystalline silicon
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9604880A
Other languages
Japanese (ja)
Inventor
Junji Tajima
Shigeru Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9604880A priority Critical patent/JPS5721865A/en
Publication of JPS5721865A publication Critical patent/JPS5721865A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce the junction leakage current of an insulated gate type field effect transistor by covering the entire region of a hole with a polycrystalline silicon layer in the method of manufacturing the device. CONSTITUTION:After a field insulating film 12 and a gate insulating film 13 are formed on the surface of a P type silicon substrate 11, N type impurity ions are injected to form an N type conductive region 15. Then, phosphrus-doped polycrystalline silicon layer is covered on the surface of the substrate, is selectively etched to form a gate electrode 17 and a wiring layer 18, phosphorus doped in the polycrystal is diffused to form a highn density N type impurity region 19. Eventually, arsenic ions are injected to form source and drain regions 20, 21.
JP9604880A 1980-07-14 1980-07-14 Manufacture of semiconductor device Pending JPS5721865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9604880A JPS5721865A (en) 1980-07-14 1980-07-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9604880A JPS5721865A (en) 1980-07-14 1980-07-14 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5721865A true JPS5721865A (en) 1982-02-04

Family

ID=14154577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9604880A Pending JPS5721865A (en) 1980-07-14 1980-07-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5721865A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63150967A (en) * 1986-12-15 1988-06-23 Nec Yamagata Ltd Mos integrated circuit device
JPS63306658A (en) * 1987-06-08 1988-12-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63150967A (en) * 1986-12-15 1988-06-23 Nec Yamagata Ltd Mos integrated circuit device
JPS63306658A (en) * 1987-06-08 1988-12-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof

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