JPS5720432A - Formation of ohmic electrode - Google Patents

Formation of ohmic electrode

Info

Publication number
JPS5720432A
JPS5720432A JP9501180A JP9501180A JPS5720432A JP S5720432 A JPS5720432 A JP S5720432A JP 9501180 A JP9501180 A JP 9501180A JP 9501180 A JP9501180 A JP 9501180A JP S5720432 A JPS5720432 A JP S5720432A
Authority
JP
Japan
Prior art keywords
film
electrodes
alloy
electrode
ohmic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9501180A
Other languages
Japanese (ja)
Inventor
Yoshinori Yamada
Kiyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9501180A priority Critical patent/JPS5720432A/en
Publication of JPS5720432A publication Critical patent/JPS5720432A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To increase the reliability of an ohmic electrode for an FET or the like by forming a high melting point metal layer of Pt, Ni or the like at a predetermined thickness ratio on an Au-Ge alloy film covered on a GaAs substrate, and alloying it with plasma Si3N4 film by covering, thereby smoothing the electrode. CONSTITUTION:An Au-Ge alloy film and, for example, an Ni film of the thickness of 1/5-1/20 of the alloy film are formed as source and drain electrodes 3, 4 on a semi-insulating substrate 1 epitaxially grown with N type operation layer 2. After an Si3N4 film 5 is covered at low temperature (lower than 350 deg.C) by a plasma CVD method, it is alloyed in an ohmic contact. Then, the film 5 is opened, a pad electrode 6 made of Cr, Au is formed, and source and drain electrodes are thus completed. Since the ball-up of the alloy can be prevented in this manner, the surfaces of the electrodes can be smoothed, and the ohmic electrodes which are not deteriorated at the contacting resistance at high temperature can be provided.
JP9501180A 1980-07-14 1980-07-14 Formation of ohmic electrode Pending JPS5720432A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9501180A JPS5720432A (en) 1980-07-14 1980-07-14 Formation of ohmic electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9501180A JPS5720432A (en) 1980-07-14 1980-07-14 Formation of ohmic electrode

Publications (1)

Publication Number Publication Date
JPS5720432A true JPS5720432A (en) 1982-02-02

Family

ID=14126011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9501180A Pending JPS5720432A (en) 1980-07-14 1980-07-14 Formation of ohmic electrode

Country Status (1)

Country Link
JP (1) JPS5720432A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02116750U (en) * 1990-03-15 1990-09-19

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50116181A (en) * 1974-02-26 1975-09-11
JPS541429A (en) * 1977-06-06 1979-01-08 Hitachi Ltd Valve device for fluid control
JPS558036A (en) * 1978-06-30 1980-01-21 Nec Corp Electrode formation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50116181A (en) * 1974-02-26 1975-09-11
JPS541429A (en) * 1977-06-06 1979-01-08 Hitachi Ltd Valve device for fluid control
JPS558036A (en) * 1978-06-30 1980-01-21 Nec Corp Electrode formation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02116750U (en) * 1990-03-15 1990-09-19

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