JPS5720431A - Manufacture of gaas semiconductor device - Google Patents

Manufacture of gaas semiconductor device

Info

Publication number
JPS5720431A
JPS5720431A JP9501080A JP9501080A JPS5720431A JP S5720431 A JPS5720431 A JP S5720431A JP 9501080 A JP9501080 A JP 9501080A JP 9501080 A JP9501080 A JP 9501080A JP S5720431 A JPS5720431 A JP S5720431A
Authority
JP
Japan
Prior art keywords
film
electrodes
sio2 film
sio2
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9501080A
Other languages
Japanese (ja)
Inventor
Yoshinori Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9501080A priority Critical patent/JPS5720431A/en
Publication of JPS5720431A publication Critical patent/JPS5720431A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To increase the reliability of an electrode structure of a GaAs semiconductor device by covering the surface on which Au-Ge alloy film and Pt film of predetermined thickness ratio are laminated with an SiO2 film, performing alloying treatment to produce ohmic electrodes and using the SiO2 film as the wiring insulating film. CONSTITUTION:In, for example, Schottky gate FET, with an SiO2 film 5 as a spacer Au-Ge and Pt are sequentially deposited by a lift-off method on the source and drain region of an N type operation layer 2 grown on a substrate 1, and electrodes 3, 4 are formed. The Pt film thickness is set at less than 1/5 of the thickness of the Au-Ge film. After an SiO2 film 6 is then covered on the overall surface, it is alloyed in hydrogen atmosphere. Subsequently, after aluminum Schottky electrode 7 is formed, a pad electrode 8 is formed on the electrodes 3, 4 as an element. When it is further, for example, integrated, a wiring layer is formed on the SiO2 film 6. Thus, it can prevent the ball-up at the alloying time, and can prevent the deterioration of the ohmic contact, thereby increasing the reliability.
JP9501080A 1980-07-14 1980-07-14 Manufacture of gaas semiconductor device Pending JPS5720431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9501080A JPS5720431A (en) 1980-07-14 1980-07-14 Manufacture of gaas semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9501080A JPS5720431A (en) 1980-07-14 1980-07-14 Manufacture of gaas semiconductor device

Publications (1)

Publication Number Publication Date
JPS5720431A true JPS5720431A (en) 1982-02-02

Family

ID=14125968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9501080A Pending JPS5720431A (en) 1980-07-14 1980-07-14 Manufacture of gaas semiconductor device

Country Status (1)

Country Link
JP (1) JPS5720431A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1044378C (en) * 1996-06-28 1999-07-28 中国石油化工总公司 Heavy Distillates Hydrotreating Catalysts

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50116181A (en) * 1974-02-26 1975-09-11
JPS541429A (en) * 1977-06-06 1979-01-08 Hitachi Ltd Valve device for fluid control
JPS558036A (en) * 1978-06-30 1980-01-21 Nec Corp Electrode formation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50116181A (en) * 1974-02-26 1975-09-11
JPS541429A (en) * 1977-06-06 1979-01-08 Hitachi Ltd Valve device for fluid control
JPS558036A (en) * 1978-06-30 1980-01-21 Nec Corp Electrode formation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1044378C (en) * 1996-06-28 1999-07-28 中国石油化工总公司 Heavy Distillates Hydrotreating Catalysts

Similar Documents

Publication Publication Date Title
GB1321034A (en) Method for making an intermetallic contact to a semiconductor device
JPS5720431A (en) Manufacture of gaas semiconductor device
JPS5691477A (en) Semiconductor
JPS56142678A (en) Field effect transistor
JPS56147434A (en) Manufacture of semiconductor device
GB1258158A (en)
JPS5720432A (en) Formation of ohmic electrode
JPS5749239A (en) Manufacture of gaas device
JPH0439228B2 (en)
JPS5742171A (en) Production of field effect semiconductor device
JPS54143065A (en) Semiconductor device
JPS5591183A (en) Manufacture of semiconductor device
JPS5768052A (en) Semiconductor device
JPS5558573A (en) Manufacture of mis semiconductor device
JPS5790978A (en) Field effect type transistor
JPS6472558A (en) Iii-v compound semiconductor device
JPS54134988A (en) Field effect transistor of schottky barrier gate type
JPS6051263B2 (en) Manufacturing method of semiconductor device
JPH0246773A (en) Compound semiconductor device and formation of its electrode
JPS56160071A (en) Manufacture of insulated gate type field effect transistor
JPS57117280A (en) Semiconductor device and manufacture thereof
JPS6461019A (en) Manufacture of compound semiconductor device
JPS5629373A (en) Schottky type field effect transistor and manufacture thereof
JPS57211784A (en) Field effect transistor
JPS6226598B2 (en)