JPS57207331A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57207331A
JPS57207331A JP56091879A JP9187981A JPS57207331A JP S57207331 A JPS57207331 A JP S57207331A JP 56091879 A JP56091879 A JP 56091879A JP 9187981 A JP9187981 A JP 9187981A JP S57207331 A JPS57207331 A JP S57207331A
Authority
JP
Japan
Prior art keywords
torr
less
substrate
layer
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56091879A
Other languages
Japanese (ja)
Inventor
Seishiro Yoshioka
Takao Yonehara
Katsumi Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56091879A priority Critical patent/JPS57207331A/en
Publication of JPS57207331A publication Critical patent/JPS57207331A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To obtain the device having the excellent characteristics by depositing a semiconductor layer on a substrate in a chamber wherein partial pressures of H2O and CO2 are 1X10<-9> Torr or less, respectively, and internal pressure is 2X10<-8> Torr or less. CONSTITUTION:Si, Ge, and the like, and their compound semiconductors are layered on glass, alumina, Si, ceramics, and the like by a vacuum deposition method. If H2O and CO2 are present when the layer is formed, the layer having the desired characteristics is not obtained. Especially, when the respective partial pressure exceeds 1X10<-9> Torr, the operation characteristics of the functional element are not improved, secular change is large, and the stable operation characteristics are not obtained. Therefore, the pressure in the chamber 1 is decreased to 5X10<-9> Torr or less. The clean substrate is heated to several hundred degrees and adsorbed material is removed. Then the temperature is decreased to a room temperature. An electron beam is collided with a semiconductor evaporating body 6 so as to evaporate it. Added impurities are also evaporated at the same time and deposited on the substrate 3. At this time, the partial pressures of H2O and CO2 are made to be 5X10<-10> Torr, respectively. In this constitution, the device characterized by large mobility, excellent functional characteristics, and the secular stable characteristics can be formed.
JP56091879A 1981-06-15 1981-06-15 Manufacture of semiconductor device Pending JPS57207331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56091879A JPS57207331A (en) 1981-06-15 1981-06-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56091879A JPS57207331A (en) 1981-06-15 1981-06-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57207331A true JPS57207331A (en) 1982-12-20

Family

ID=14038838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56091879A Pending JPS57207331A (en) 1981-06-15 1981-06-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57207331A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122482A (en) * 1989-03-31 1992-06-16 Agency Of Industrial Science & Technology Method for treating surface of silicon

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615031A (en) * 1979-07-17 1981-02-13 Matsushita Electric Ind Co Ltd Molecular beam epitaxial growing apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615031A (en) * 1979-07-17 1981-02-13 Matsushita Electric Ind Co Ltd Molecular beam epitaxial growing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122482A (en) * 1989-03-31 1992-06-16 Agency Of Industrial Science & Technology Method for treating surface of silicon

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