JPS57207341A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57207341A
JPS57207341A JP56092445A JP9244581A JPS57207341A JP S57207341 A JPS57207341 A JP S57207341A JP 56092445 A JP56092445 A JP 56092445A JP 9244581 A JP9244581 A JP 9244581A JP S57207341 A JPS57207341 A JP S57207341A
Authority
JP
Japan
Prior art keywords
substance
etched
thickness
pattern
slant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56092445A
Other languages
Japanese (ja)
Inventor
Wakao Miyazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56092445A priority Critical patent/JPS57207341A/en
Publication of JPS57207341A publication Critical patent/JPS57207341A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To easily control the slant of the etched surface of etched substance, by devising the form of an etching mask material. CONSTITUTION:The thin film etched substance 12 is formed on a semiconductor substrate 11 with a resist pattern with thickness of 0.2mm. 13 superposed by a resist pattern 14 with thickness of 0.8mm. smaller than the pattern 13 by 1-2mum. After etching to the half, the substance 12 is put in O2 plasma to remove the resist 13. Another etching forms the pattern of the etched substance 12 having a slant side surface. Slant angles can be controlled by varying the rate of thickness of the first and second resists.
JP56092445A 1981-06-16 1981-06-16 Manufacture of semiconductor device Pending JPS57207341A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56092445A JPS57207341A (en) 1981-06-16 1981-06-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56092445A JPS57207341A (en) 1981-06-16 1981-06-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57207341A true JPS57207341A (en) 1982-12-20

Family

ID=14054601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56092445A Pending JPS57207341A (en) 1981-06-16 1981-06-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57207341A (en)

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