JPS5721877A - Photoelectric converter - Google Patents

Photoelectric converter

Info

Publication number
JPS5721877A
JPS5721877A JP9595880A JP9595880A JPS5721877A JP S5721877 A JPS5721877 A JP S5721877A JP 9595880 A JP9595880 A JP 9595880A JP 9595880 A JP9595880 A JP 9595880A JP S5721877 A JPS5721877 A JP S5721877A
Authority
JP
Japan
Prior art keywords
regions
injected
substrate
type
photoelectric converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9595880A
Other languages
Japanese (ja)
Other versions
JPS6222548B2 (en
Inventor
Takeshi Kobayashi
Takashi Nishioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9595880A priority Critical patent/JPS5721877A/en
Publication of JPS5721877A publication Critical patent/JPS5721877A/en
Publication of JPS6222548B2 publication Critical patent/JPS6222548B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To lower the bias power source and to improve an S/N ratio of a photoelectric converter by providing amplifying function to the photoelectric converting function. CONSTITUTION:P type regions 13, 14 injected with boron and N type regions 15, 16 injected with phosphorus are formed on a semi-insulating silicon crystal substrate 11 injected with Au, Ni or Be for imparting deep energy level, and light emitting regions 17, 18 are formed between the regions 13, 14 and 15, 16. A light transmitting insulating film 19 of oxide of the substrate 11 is formed on the overall surface of the substrate 11, and conductive layers 20, 21, 23, 25, 28 of deposited layer of Au are formed further thereon. A P type channel MISFET is formed of the regions 13, 14, 17, and an N type channel MISFET is formed of the regions 15, 16, 18.
JP9595880A 1980-07-14 1980-07-14 Photoelectric converter Granted JPS5721877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9595880A JPS5721877A (en) 1980-07-14 1980-07-14 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9595880A JPS5721877A (en) 1980-07-14 1980-07-14 Photoelectric converter

Publications (2)

Publication Number Publication Date
JPS5721877A true JPS5721877A (en) 1982-02-04
JPS6222548B2 JPS6222548B2 (en) 1987-05-19

Family

ID=14151736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9595880A Granted JPS5721877A (en) 1980-07-14 1980-07-14 Photoelectric converter

Country Status (1)

Country Link
JP (1) JPS5721877A (en)

Also Published As

Publication number Publication date
JPS6222548B2 (en) 1987-05-19

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