JPS5723231A - Formation of thin film - Google Patents

Formation of thin film

Info

Publication number
JPS5723231A
JPS5723231A JP9889180A JP9889180A JPS5723231A JP S5723231 A JPS5723231 A JP S5723231A JP 9889180 A JP9889180 A JP 9889180A JP 9889180 A JP9889180 A JP 9889180A JP S5723231 A JPS5723231 A JP S5723231A
Authority
JP
Japan
Prior art keywords
film
thin film
minute
ions
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9889180A
Other languages
Japanese (ja)
Other versions
JPS6217854B2 (en
Inventor
Yasutoshi Suzuki
Kunihiko Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP9889180A priority Critical patent/JPS5723231A/en
Publication of JPS5723231A publication Critical patent/JPS5723231A/en
Publication of JPS6217854B2 publication Critical patent/JPS6217854B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain a minute thin film of favorable quality by a method wherein minute powder of P2O5 is mixed in minute powder of the main constituting material of the thin film and is baked to form a plate, and making the plate as a target, sputtering is performed to form the thin film on a substrate and at the same time P ions are mixed to make to perform gettering. CONSTITUTION:After wirings 5 of Al, etc., are provided on the IC substrate 1, and an SiO protective film 6 containing P is laminated thereon by high-frequency sputtering making the solid plate obtained by mixing and baking respective minute powder of SiO2 and P2O5 as the target. By this constitution, because the film 6 has minute film quality, and movable ions, etc., generated by contamination when the film is formed are caught by P ions, the device having favorable quality and high reliability can be obtained.
JP9889180A 1980-07-18 1980-07-18 Formation of thin film Granted JPS5723231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9889180A JPS5723231A (en) 1980-07-18 1980-07-18 Formation of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9889180A JPS5723231A (en) 1980-07-18 1980-07-18 Formation of thin film

Publications (2)

Publication Number Publication Date
JPS5723231A true JPS5723231A (en) 1982-02-06
JPS6217854B2 JPS6217854B2 (en) 1987-04-20

Family

ID=14231751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9889180A Granted JPS5723231A (en) 1980-07-18 1980-07-18 Formation of thin film

Country Status (1)

Country Link
JP (1) JPS5723231A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986227A (en) * 1982-11-10 1984-05-18 Toshiba Corp Forming method for glass film
JPS6229144A (en) * 1985-07-29 1987-02-07 Shinetsu Ishiei Kk Target for sputtering
US5227314A (en) * 1989-03-22 1993-07-13 At&T Bell Laboratories Method of making metal conductors having a mobile inn getterer therein

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986227A (en) * 1982-11-10 1984-05-18 Toshiba Corp Forming method for glass film
JPS6229144A (en) * 1985-07-29 1987-02-07 Shinetsu Ishiei Kk Target for sputtering
US5227314A (en) * 1989-03-22 1993-07-13 At&T Bell Laboratories Method of making metal conductors having a mobile inn getterer therein

Also Published As

Publication number Publication date
JPS6217854B2 (en) 1987-04-20

Similar Documents

Publication Publication Date Title
JPS56160034A (en) Impurity diffusion
JPS5723231A (en) Formation of thin film
JPS5760669A (en) Lithium oxide group non-crystal material and production thereof
JPS5426546A (en) High frequency wave heating device power control method
JPS54153790A (en) Chromium oxide layer formation
JPS5253658A (en) Method of introducing impurity into semiconductor
JPS552982A (en) Semi-conductor layer thickness measuring method
JPS56131948A (en) Manufacture of semiconductor element
JPS5617917A (en) Manufacture of silicon oxide film
JPS57172742A (en) Forming method of thin film of oxide glass
JPS5666038A (en) Formation of micro-pattern
JPS5271606A (en) Fabrication of commutator substrate
JPS5687339A (en) Manufacture of semiconductor device
JPS54158870A (en) Etching method
JPS5393788A (en) Production of semiconductor device
JPS5440073A (en) Film forming method
JPS55114935A (en) Etching state measuring sample
JPS51126384A (en) A method of forming a thin film by sputtering
JPS51150984A (en) Dielectric isolation method
JPS549574A (en) Plams display panel
JPS56110230A (en) Forming method of electrode on semiconductor device
JPS5518159A (en) Frequency control method for surface wave device
JPS5259896A (en) Manufacture of dielectric film
JPS5226882A (en) Apparatus for direct measurement of substrate temperatures
JPS5656674A (en) Mosfet of high pressure resisting property and preparation thereof