JPS5728331A - Electronic beam exposing system - Google Patents

Electronic beam exposing system

Info

Publication number
JPS5728331A
JPS5728331A JP10344380A JP10344380A JPS5728331A JP S5728331 A JPS5728331 A JP S5728331A JP 10344380 A JP10344380 A JP 10344380A JP 10344380 A JP10344380 A JP 10344380A JP S5728331 A JPS5728331 A JP S5728331A
Authority
JP
Japan
Prior art keywords
information
pattern
unit scanning
inverted
describing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10344380A
Other languages
Japanese (ja)
Inventor
Seigo Igaki
Yoshiaki Goto
Yasuo Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10344380A priority Critical patent/JPS5728331A/en
Publication of JPS5728331A publication Critical patent/JPS5728331A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To reduce the quantity of information in describing a pattern made from basic elements regularly disposed by a method wherein a pattern package information about a unit scanning region containing said basic element is formed to be used repeatedly for each unit scanning region. CONSTITUTION:In describing Chevron pattren CP, the whole pattern is divided by a symmetrical axis into unit scanning regions QR1 and QR2, each containing a basic element CP1 and its mirrored element CP2 respectively. A pattern package memory holds electronic beam on/off information about QR1. Deflection signals are added to scan the whole region of QR1 and the information is read-out in synchronization with the deflection signals and added to a blanker. Inbetween informations are treated in the following way: between A and B; read-out as it is to be used, between B and C; inverted to be used in BA order, between D and E; information between E and F are inverted to be exposed in FE order, between E and F; used as it is. By said method, a desired pattern CP is obtained with the pattern package information of 1/2 in quantity. Namely, the quantity of information can be reduced down to 1/n of usual method.
JP10344380A 1980-07-28 1980-07-28 Electronic beam exposing system Pending JPS5728331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10344380A JPS5728331A (en) 1980-07-28 1980-07-28 Electronic beam exposing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10344380A JPS5728331A (en) 1980-07-28 1980-07-28 Electronic beam exposing system

Publications (1)

Publication Number Publication Date
JPS5728331A true JPS5728331A (en) 1982-02-16

Family

ID=14354169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10344380A Pending JPS5728331A (en) 1980-07-28 1980-07-28 Electronic beam exposing system

Country Status (1)

Country Link
JP (1) JPS5728331A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0244712A (en) * 1988-08-05 1990-02-14 Toshiba Mach Co Ltd Lithography of pattern including axisymmetrical pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0244712A (en) * 1988-08-05 1990-02-14 Toshiba Mach Co Ltd Lithography of pattern including axisymmetrical pattern

Similar Documents

Publication Publication Date Title
DE3172837D1 (en) High density semiconductor memory device and process for producing the same
JPS57171337A (en) Production of halftone plate picture
EP0164880A3 (en) A circuit for modifying data in a display memory
EP0089530A3 (en) Polimerization process of optically active polymer and catalyst therefor
NO175839C (en) Hydride reactor apparatus for hydrogen fine crushing of metal hydride, hydrogen storage material
SE8904229D0 (en) BRAENSLEPATRON CARRIES A NUCLEAR WATER TYPE REACTOR
DE3772109D1 (en) VERTICALLY STRUCTURED DYNAMIC HIGH DENSITY STORAGE.
IT8321576A0 (en) REACTOR FOR THE INJECTION OF GAS INTO A LIQUID.
DE3763420D1 (en) LIQUID FUEL HIGH DENSITY.
IT8320747A0 (en) METHOD FOR PRODUCING HIGH DENSITY CARBON.
JPS5728331A (en) Electronic beam exposing system
DE3374819D1 (en) Display control circuit for reading display data from a video ram constituted by a dynamic ram, thereby refreshing memory cells of the video ram
FR2572844B1 (en) MAGNETIC MATERIAL OF THE GRENATE TYPE, MAGNETIC FILM WITH HIGH ROTATION FARADAY COMPRISING SUCH A MATERIAL AND METHOD FOR MANUFACTURING THE SAME
GB2057905B (en) Process for producing 1,4-naphtoquinone and catalyst therefor
DE3580944D1 (en) LIQUID FUEL WITH HIGH DENSITY.
DE3669171D1 (en) LIQUID FUEL HIGH DENSITY.
JPS5668988A (en) Semiconductor memory
JPS6490681A (en) Adjusting method for picture display device
JPS57120155A (en) Delay process system
JPS57108975A (en) Character pattern information processing system
JPS6423500A (en) Read-only semiconductor memory
JPS5791522A (en) Electron beam exposure system
JPS5534424A (en) Electron beam exposing device
GB2159319B (en) Nuclear fuel for fast reactors.
BE875499A (en) PROCESS FOR MANUFACTURING ELECTRODES FOR FUEL CELLS, DEVICE FOR IMPLEMENTING THE PROCESS AND ELECTRODES RESULTING FROM THIS PROCESS