JPS5728367A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5728367A
JPS5728367A JP10385380A JP10385380A JPS5728367A JP S5728367 A JPS5728367 A JP S5728367A JP 10385380 A JP10385380 A JP 10385380A JP 10385380 A JP10385380 A JP 10385380A JP S5728367 A JPS5728367 A JP S5728367A
Authority
JP
Japan
Prior art keywords
layer
high resistance
metallic electrode
diffusion
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10385380A
Other languages
Japanese (ja)
Inventor
Shigenari Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10385380A priority Critical patent/JPS5728367A/en
Publication of JPS5728367A publication Critical patent/JPS5728367A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prepare an element with PIN structure by a method wherein opposite conduction type impurities are introduced selectively onto the surface of a substrate with high resistance, a metallic electrode is formed, the back is ground and removed, the same conduction type impurites are injected to the removed surface and the removed surface is annealed by radiation. CONSTITUTION:An N<+> guard ring layer 3 is diffused and shaped to the N<-> type substrate 1 with high resistance, using an oxide film 2 as a mask, an exposed surface is oxidized again, and a predetermined position of the oxide film 2 is opened and a P<+> diffusion layer 5 is formed. The metallic electrode 6 contacting with the diffusion layer 5 in an ohmic shape is molded, and the back side is removed so that the N<-> layer 1 is formed in fixed thickness through etching. The ions of N type impurities are injected to the removed surface, and changed into an N<+> layer 4a through a method such as annealing by a lasre, a metallic electrode 7 is shaped and a PIN diode is manufactured. Accordingly, since most manufacturing processes of the element containing an I layer (a layer with high resistance) with thickness, which is difficult to be formed through the methods of epitaxial growth or diffusion or the like, can be executed under a condition of a thick water, the semiconductor device can easily be prepared, and a high acceptable ratio can be obtained.
JP10385380A 1980-07-29 1980-07-29 Manufacture of semiconductor device Pending JPS5728367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10385380A JPS5728367A (en) 1980-07-29 1980-07-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10385380A JPS5728367A (en) 1980-07-29 1980-07-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5728367A true JPS5728367A (en) 1982-02-16

Family

ID=14364994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10385380A Pending JPS5728367A (en) 1980-07-29 1980-07-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5728367A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227739A (en) * 1983-05-21 1984-12-21 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Manufacture of optical fiber
JPS60148113A (en) * 1984-01-12 1985-08-05 Nec Corp Manufacture of semiconductor device
JPS60208868A (en) * 1984-03-12 1985-10-21 モトローラ・インコーポレーテツド Low noise zener diode unit and method
JPS62195180A (en) * 1986-02-21 1987-08-27 Nec Corp Manufacturing method of semiconductor device
JPH01258476A (en) * 1988-04-08 1989-10-16 Toshiba Corp High breakdown voltage semiconductor device and manufacture thereof
EP0869559A3 (en) * 1997-04-04 1999-01-13 Siemens Aktiengesellschaft Leistungsdiode
US6504178B2 (en) * 1999-07-02 2003-01-07 Digirad Corporation Indirect back surface contact to semiconductor devices
JP2010118674A (en) * 2010-01-08 2010-05-27 Fuji Electric Systems Co Ltd Semiconductor device and method of manufacturing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227739A (en) * 1983-05-21 1984-12-21 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Manufacture of optical fiber
JPS60148113A (en) * 1984-01-12 1985-08-05 Nec Corp Manufacture of semiconductor device
JPS60208868A (en) * 1984-03-12 1985-10-21 モトローラ・インコーポレーテツド Low noise zener diode unit and method
JPS62195180A (en) * 1986-02-21 1987-08-27 Nec Corp Manufacturing method of semiconductor device
JPH01258476A (en) * 1988-04-08 1989-10-16 Toshiba Corp High breakdown voltage semiconductor device and manufacture thereof
EP0869559A3 (en) * 1997-04-04 1999-01-13 Siemens Aktiengesellschaft Leistungsdiode
US6504178B2 (en) * 1999-07-02 2003-01-07 Digirad Corporation Indirect back surface contact to semiconductor devices
JP2010118674A (en) * 2010-01-08 2010-05-27 Fuji Electric Systems Co Ltd Semiconductor device and method of manufacturing the same

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