JPS5730352A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5730352A JPS5730352A JP10451380A JP10451380A JPS5730352A JP S5730352 A JPS5730352 A JP S5730352A JP 10451380 A JP10451380 A JP 10451380A JP 10451380 A JP10451380 A JP 10451380A JP S5730352 A JPS5730352 A JP S5730352A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- substrate
- wires
- lead
- nonradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
- H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE:To prevent the deterioration in the electric characteristics of a semiconductor device against the exposure of radiation by covering the surface of the active region of a semiconductor chip with nonradiation transmitting metal, e.g., lead or the like. CONSTITUTION:Circuit elements are formed on the active part of a silicon substrate 16, an insulating film is formed on the surface of the substrate, and electric wires are connected through holes formed on the insulating film with aluminum wires 14. An insulating film 11, e.g., dioxidized silicon or the like is formed to protect the surface of the wires 14, and a metallic film 11, e.g., lead or the like is formed on the surface. Electrode pads 13 formed continuously to the wires 4 are formed on the insulating film on the nonactive surface of the substrate 16. Since nonradiation transmitting material, e.g., lead or the like is covered on the active region of the substrate 16, the electric characteristics of the circuit elements are not deteriorated even if exposed with X-ray or the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10451380A JPS5730352A (en) | 1980-07-30 | 1980-07-30 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10451380A JPS5730352A (en) | 1980-07-30 | 1980-07-30 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5730352A true JPS5730352A (en) | 1982-02-18 |
Family
ID=14382568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10451380A Pending JPS5730352A (en) | 1980-07-30 | 1980-07-30 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5730352A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5437527A (en) * | 1977-08-30 | 1979-03-20 | Sanyo Electric Co Ltd | Receiver for still picture |
-
1980
- 1980-07-30 JP JP10451380A patent/JPS5730352A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5437527A (en) * | 1977-08-30 | 1979-03-20 | Sanyo Electric Co Ltd | Receiver for still picture |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5655067A (en) | Semiconductor integrated circuit device | |
| JPS55163877A (en) | Semiconductor integrated circuit device | |
| JPS5645054A (en) | Resin sealing semiconductor device | |
| JPS56148857A (en) | Semiconductor device | |
| JPS56165341A (en) | Semiconductor device | |
| CA2017080A1 (en) | Semiconductor device package structure | |
| EP0338213A3 (en) | Semiconductor device with a metal package | |
| JPS57157550A (en) | Semiconductor device | |
| FR2309979A1 (en) | INTEGRATED SEMICONDUCTOR CIRCUIT CONTAINING PROTECTED ELECTRICAL WIRE CONNECTIONS | |
| JPS5742153A (en) | Semiconductor device | |
| JPS5483768A (en) | Semiconductor device | |
| JPS5736859A (en) | Integrated circuit device | |
| JPS57107043A (en) | Semiconductor integrated circuit device | |
| JPS5789276A (en) | Photo chip element | |
| JPS553657A (en) | Electronic circuit device | |
| JPS57121260A (en) | Semiconductor device | |
| JPS57121239A (en) | Semiconductor device | |
| JPS5253670A (en) | Semiconductor device | |
| JPS5587461A (en) | Microwave integrated circuit package | |
| JPS57136339A (en) | Resin sealing type semiconductor device | |
| JPS647546A (en) | Resin-sealed semiconductor device | |
| JPS57132332A (en) | Semiconductor device | |
| JPS57201037A (en) | Semiconductor device | |
| JPS55132059A (en) | Semiconductor device and its manufacturing | |
| JPS5793538A (en) | Semiconductor device |